OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

F5E2

P1-P3
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
ANODE
(CASE)
Ø0.020 (0.51) 2X
0.155 (3.94)
MAX
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2 ! steradians.
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Forward Current (pw, 10µs; 100Hz) I
F
3A
Forward Current (pw, 1µs; 200Hz) I
F
10 A
Reverse Voltage V
R
3V
Power Dissipation (T
A
= 25°C)
(1)
P
D
170 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
DESCRIPTION
The F5E series are 880nm LEDs in a
wide angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength I
F
= 100 mA "
PE
— 880 — nm
Emission Angle at 1/2 Power # — ±40 — Deg.
Forward Voltage I
F
= 100 mA V
F
— — 1.7 V
Reverse Leakage Current V
R
= 3 V I
R
— — 10 µA
Total Power F5E1
(7)
I
F
= 100 mA P
O
12.0 — — mW
Total Power F5E2
(7)
I
F
= 100 mA P
O
9.0 — — mW
Total Power F5E3
(7)
I
F
= 100 mA P
O
10.5 — — mW
Rise Time 0-90% of output t
r
— 1.5 — µs
Fall Time 100-10% of output t
f
— 1.5 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300287 4/25/01 1 OF 3 www.fairchildsemi.com
Figure 2. Power Output vs. Temperature
0.1
0.2
0-25
T
A
, AMBIENT TEMPERATURE (
°
C)
0.4
0.6
0.8
4
6
20
1
2
8
10
25
P
O
, NORMALIZED POWER OUTPUT
7550 100 125 150
I
F
= 100 mA,
I
F
= 1 A
T
A
= 25
°
C
NORMALIZED TO
P
W
= 80 µsec,
f = 30 Hz
Figure 4. Typical Radiation Pattern
700
λ - WAVE LENGTH (nm)
40
60
80
100
120
20
1000800 900
Figure 5. Output vs. Wavelength
0
20
-80 -60 -40 -20
θ - DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
40
60
80
100
0
P
O
, RELATIVE CURRENT (%)
10040 60 8020
Figure 1. Power Output vs. Input Current
0.001
0.01
I
F
, INPUT CURRENT (mA)
0.1
1.0
10
1
P
O
, NORMALIZED POWER CURRENT
RELATIVE OUTPUT (%)
10 1000100
I
F
= 100 mA
T
A
= 25
°
C
NORMALIZED TO
P
W
= 80 µsec
RR = 30 Hz
PULSED INPUTS
I
F
= 100 mA
Figure 3. Forward Voltage vs. Temperature
1
0-25
T
A
, AMBIENT TEMPERATURE (
°
C)
3
4
2
25
V
F
, FORWARD VOLTAGE (V)
7550 100 125 150
I
F
= 1 A
P
W
= 80 µsec
f = 30 Hz
0.5 A
100 mA
10 mA
F5E
F5E
TYPICAL SPECTRAL
RESPONSE OF SLICON
PHOTOSENSORS
I
F
= 100 mA
T
A
= 25
°
C
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
www.fairchildsemi.com 2 OF 3 4/25/01 DS300287
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
DS300287 4/25/01 3 OF 3 www.fairchildsemi.com
P1-P3

F5E2

Mfr. #:
Buy F5E2
Manufacturer:
ON Semiconductor / Fairchild
Description:
Infrared Emitters 9mW 1.7V IR LED
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet