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MBRS360T3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
April, 2017 − Rev. 10
1 Publication Order Number:
MBRS360T3/D
MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately), SMC 2−LEAD
95 mg (Approximately), SMB
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Device Meets MSL 1 Requirements
• ESD Ratings:
♦ Machine Model, C
♦ Human Body Model, 3B
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 60 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS360T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
B36 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAMS
MBRS360BT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS360T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
2,500 /
Tape & Reel
NRVBS360BT3G* SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS360BT3G
−VF01*
SMB
(Pb−Free)
AYWW
B36G
G
SMB
CASE 403A
AYWW
B36G
G
SMC 2−LEAD
CASE 403AC
** The Assembly Location code (A) is front side
optional. In cases where the Assembly Location i
s
stamped in the package, the front side assembly
code may be blank.
(Note: Microdot may be in either location)
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current I
F(AV)
3.0 @ T
L
= 137°C
4.0 @ T
L
= 127°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
125
A
Storage Temperature Range T
stg
− 65 to +175 °C
Operating Junction Temperature (Note 1) T
J
− 65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
SMC Package
SMB Package
R
q
JL
11
15
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
SMC Package
SMB Package
R
q
JA
136
145
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
SMC Package
SMB Package (Note 4)
R
q
JA
71
73
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 5)
(i
F
= 3.0 A, T
J
= 25°C)
V
F
0.63
V
Maximum Instantaneous Reverse Current (Note 5)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 100°C)
i
R
0.03
3.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= −40°C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= −40°C
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8
T
J
= 175°C
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 175°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
R
, INSTANTANEOUS REVERSE
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
1.0E−07
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
0 102030405060
T
J
= 175°C
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
0 102030405060
T
J
= 175°C
P1-P3P4-P6P7-P7

MBRS360T3G

Mfr. #:
Buy MBRS360T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 60V
Lifecycle:
New from this manufacturer.
Delivery:
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