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STTH6004W

P1-P3P4-P6
®
1/6
Table 1: Main product characteristics
I
F(AV)
60 A
V
RRM
400 V
T
j
(max)
175 °C
V
F
(typ)
0.83 V
t
rr
(max)
50 ns
STTH6004W
Ultrafast high voltage rectifier
Table 3: Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
RMS forward current 90 A
I
F(AV)
Average forward current T
c
= 125 °C δ = 0.5 60 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 600 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
K
A
DO-247
STTH6004W
October 2005 REV. 1
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching & conduction losses
Description
The STTH6004W uses ST 400V technology and
is specially suited for use in switching power
supplies, welding equipment and industrial
applications, as an output rectification diode.
Table 2: Order codes
Part number Marking
STTH6004W STTH6004W
STTH6004W
2/6
Table 4: Thermal Resistance
Table 5: Static electrical characteristics
Pulse test: * t
p
= 5 ms, δ < 2%
** t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.8 x I
F(AV)
+ 0.0033 I
F
2
(RMS)
Table 6: Dynamic characteristics
Symbol Parameter Value (max). Unit
R
th(j-c)
Junction to case 0.70 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
* Reverse leakage current T
j
= 25 °C V
R
= V
RRM
50 µA
T
j
= 150 °C 100 1000
V
F
** Forward voltage drop T
j
= 25 °C I
F
= 60 A 1.2 V
T
j
= 150 °C 0.83 1.0
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery
time
T
j
= 25 °C I
F
= 1 A dI
F
/dt = 50 A/µs V
R
=30 V 66 90 ns
I
F
= 1 A dI
F
/dt = 200 A/µs V
R
=30 V 36 50
I
RM
Reverse recovery
current
T
j
= 125 °C I
F
= 60 A V
R
= 200 V
dI
F
/dt = 100 A/µs
15 A
S
factor
Softness factor T
j
= 125 °C I
F
= 60 A V
R
= 200 V
dI
F
/dt = 100 A/µs
0.4
t
fr
Forward recovery
time
T
j
= 25 °C I
F
= 60 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
600 ns
V
FP
Forward recovery
voltage
T
j
= 25 °C I
F
= 60 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
3.2 V
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
0
10
20
30
40
50
60
70
80
0 1020304050607080
P(W)
d=0.05
d=0.1
d=0.2
d=0.5
d=1
T
I
F(AV)
(A)
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
FM
(A)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Typical values)
T
J
=25°C
(Maximum values)
V
FM
(V)
STTH6004W
3/6
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values)
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values)
Figure 6: Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 7: Reverse recovery softness factor
versus dI
F
/dt (typical values)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Z
th(j-c)
/R
th(j-c)
Single pulse
t
P
(s)
0
5
10
15
20
25
30
35
40
45
0 50 100 150 200 250 300 350 400 450 500
I
RM
(A)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
0 50 100 150 200 250 300 350 400 450 500
t(ns)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
rr
0
500
1000
1500
2000
2500
3000
0 100 200 300 400 500
Q(nC)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
rr
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200 250 300 350 400 450 500
S
FACTOR
I
F
< 2 x I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125
I
RM
&t
RR
S
FACTOR
I
F
=I
F(AV)
V
R
=200V
Reference: T
j
=125°C
Q
RR
T
j
(°C)
P1-P3P4-P6

STTH6004W

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Buy STTH6004W
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast high voltage rectifier
Lifecycle:
New from this manufacturer.
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