TSH251
Micropower CMOS Output Hall Effect Switch
1/8
Version: B14
Description
TSH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power
switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that
utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding,
temperature dependencies, and thermal stress. TSH251 is special made for low operation voltage at 1.65V, to
active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator,
small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer
fabrication processing is used to take advantage of low-voltage requirements, component matching, very low
input-offset errors, This device requires the presence of omni-polar magnetic fields for operation.
Features
● CMOS Hall IC Technology
● Strong RF noise protection
● 1.65 to 3.5V for battery-powered applications
● Omni polar, output switches with absolute value of
North or South pole from magnet
● Operation down to 1.65V, micropower consumption
● High Sensitivity for reed switch replacement
applications
● Low sensitivity drift in crossing of Temp. range
● Ultra Low power consumption at 5µA (avg.)
● High ESD Protection, HBM > ±4KV( min )
● Totem-pole output
Ordering Information
Part No. Package Packing
TSH251CT B0G TO-92S 1kpcs / Bulk Bag
TSH251CX RFG TSOT-23 3kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Application
● Solid state switch, Water Meter, Floating Meter
● Handheld Wireless Handset Awake Switch
(Flip Cell/PHS Phone/Note Book/Flip Video Set)
● Lid close sensor for battery powered devices
● Magnet proximity sensor for reed switch
replacement in low duty cycle applications
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Characteristics
Limit Value
Unit
Supply voltage
V
4.5
V
Output Voltage
V
4.5
V
Reverse Voltage
V
-0.3
V
Magnetic flux density
Unlimited
Gauss
Output current
I
1
mA
Operating temperature range
T
OPR
-40 to +85
o
C
Storage temperature range
T
-65 to +150
C
Maximum Junction Temp
T
150
C
Thermal Resistance - Junction to Ambient
TO-92S
R
θJA
206
o
C/W
TSOT-23
543
Thermal Resistance - Junction to Case
TO-92S
R
θJC
148
o
C/W
TSOT-23
410
Package Power Dissipation
TO-92S
P
D
606
mW
TSOT-23
230
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
1. V
CC
2. GND
3. Output
1. V
CC
2. Output
3. GND
