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74ABT623PW,112

P1-P3P4-P6P7-P9P10-P12P13-P15
74ABT623_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 October 2009 4 of 15
NXP Semiconductors
74ABT623
Octal transceiver with dual enable; non-inverting; 3-state
5. Pinning information
5.1 Pinning
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
Fig 4. Pin configuration SO20 Fig 5. Pin configuration (T)SSOP20
74ABT623
OEAB V
CC
A0 OEBA
A1 B0
A2 B1
A3 B2
A4 B3
A5 B4
A6 B5
A7 B6
GND B7
001aak828
1
2
3
4
5
6
7
8
9
10
12
11
14
13
16
15
18
17
20
19
74ABT623
OEAB V
CC
A0 OEBA
A1 B0
A2 B1
A3 B2
A4 B3
A5 B4
A6 B5
A7 B6
GND B7
001aak829
1
2
3
4
5
6
7
8
9
10
12
11
14
13
16
15
18
17
20
19
Table 2. Pin description
Symbol Pin Description
OEAB 1 output enable input (active HIGH)
A0 to A7 2, 3, 4, 5, 6, 7, 8, 9 data input or output
B0 to B7 18, 17, 16, 15, 14, 13, 12, 11 data input or output
GND 10 ground (0 V)
OEBA 19 output enable input (active LOW)
V
CC
20 supply voltage
Table 3. Function table
[1]
Input Input or output
OEAB OEBA An Bn
L L An = Bn input
H H input Bn = An
LHZZ
H L An = Bn input
H L input Bn = An
74ABT623_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 October 2009 5 of 15
NXP Semiconductors
74ABT623
Octal transceiver with dual enable; non-inverting; 3-state
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
[3] For SO20 package: P
tot
derates linearly with 8 mW/K above 70 °C.
For SSOP20 and TSSOP20 package: P
tot
derates linearly with 5.5 mW/K above 60 °C.
8. Recommended operating conditions
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
V
I
input voltage
[1]
−1.2 +7.0 V
V
O
output voltage output in OFF-state or
HIGH-state
[1]
−0.5 +5.5 V
I
IK
input diode current V
I
< 0 V −18 - mA
I
OK
output diode current V
O
< 0 V −50 - mA
I
O
output current output in LOW-state - 128 mA
T
j
junction temperature
[2]
- 150 °C
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +85 °C
[3]
- 500 mW
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 - 5.5 V
V
I
input voltage 0 - V
CC
V
V
IH
HIGH-level input voltage 2.0 - - V
V
IL
LOW-level input voltage - - 0.8 V
I
OH
HIGH-level output current −32 - - mA
I
OL
LOW-level output current - - 64 mA
∆t/∆V input transition rise or fall rate 0 - 10 ns/V
T
amb
ambient temperature in free air −40 - +85 °C
74ABT623_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 October 2009 6 of 15
NXP Semiconductors
74ABT623
Octal transceiver with dual enable; non-inverting; 3-state
9. Static characteristics
[1] This parameter is valid for any V
CC
between 0 V and 2.1 V, with a transition time of up to 10 ms. From V
CC
= 2.1 V to V
CC
=5V± 10 %,
a transition time of up to 100 ms is permitted.
[2] Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[3] This is the increase in supply current for each input at 3.4 V.
Table 6. Static characteristics
Symbol Parameter Conditions 25 °C −40 °C to +85 °C Unit
Min Typ Max Min Max
V
IK
input clamping voltage V
CC
= 4.5 V; I
IK
= −18 mA - −0.9 −1.2 - −1.2 V
V
OH
HIGH-level output
voltage
V
I
= V
IL
or V
IH
V
CC
= 4.5 V; I
OH
= −3 mA 2.5 2.9 - 2.5 - V
V
CC
= 5.0 V; I
OH
= −3 mA 3.0 3.4 - 3.0 - V
V
CC
= 4.5 V; I
OH
= −32 mA 2.0 2.4 - 2.0 - V
V
OL
LOW-level output
voltage
V
CC
= 4.5 V; I
OL
= 64 mA;
V
I
=V
IL
or V
IH
- 0.42 0.55 - 0.55 V
I
I
input leakage current V
CC
= 5.5 V; V
I
= GND or 5.5 V
OEAB,
OEBA - ±0.01 ±1.0 - ±1.0 µA
An, Bn - ±5.0 ±100 - ±100 µA
I
OFF
power-off leakage
current
V
CC
= 0.0 V; V
I
or V
O
≤ 4.5 V - ±5.0 ±100 - ±100 µA
I
O(pu/pd)
power-up/power-down
output current
V
CC
= 2.0 V; V
O
= 0.5 V;
V
I
= GND or V
CC
; OEAB = GND;
OEBA = V
CC
[1]
- ±5.0 ±50 - ±50 µA
I
OZ
OFF-state output
current
V
CC
= 5.5 V; V
I
= V
IL
or V
IH
V
O
= 2.7 V - 5.0 50 - 50 µA
V
O
= 0.5 V - −5.0 −50 - −50 µA
I
LO
output leakage current HIGH-state; V
O
= 5.5 V;
V
CC
= 5.5 V; V
I
= GND or V
CC
- 5.0 50 - 50 µA
I
O
output current V
CC
= 5.5 V; V
O
= 2.5 V
[2]
−180 −100 −50 −180 −50 mA
I
CC
supply current V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state - 50 250 - 250 µA
outputs LOW-state - 24 30 - 30 mA
outputs disabled - 50 250 - 250 µA
∆I
CC
additional supply
current
per input pin; V
CC
= 5.5 V;
one input pin at 3.4 V, other inputs
at V
CC
or GND
[3]
outputs enabled - 0.5 1.5 - 1.5 mA
outputs disabled - 50 250 - 250 mA
one enable input at 3.4 V and other
inputs at V
CC
or GND; outputs
disabled
- 0.5 1.5 - 1.5 mA
C
I
input capacitance V
I
= 0 V or V
CC
-4- - -pF
C
I/O
input/output
capacitance
outputs disabled; V
O
= 0 V or V
CC
-7- - -pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74ABT623PW,112

Mfr. #:
Buy 74ABT623PW,112
Manufacturer:
NXP Semiconductors
Description:
IC TXRX NON-INVERT 5.5V 20TSSOP
Lifecycle:
New from this manufacturer.
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