GP10-4002, GP10-4003, GP10-4004, GP10-4005, GP10-4006, GP10-4007
www.vishay.com
Vishay General Semiconductor
Revision: 19-Apr-17
1
Document Number: 87651
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Glass Passivated Junction Plastic Rectifier
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes.
MECHANICAL DATA
Case: DO-41 (DO-204AL), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V to 1000 V
I
FSM
30 A
I
R
5.0 μA
V
F
1.1 V
T
J
max. 175 °C
Package DO-41 (DO-204AL)
Circuit configuration Single
DO-41 (DO-204AL)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
GP10-4002 GP10-4003 GP10-4004 GP10-4005 GP10-4006 GP10-4007
UNIT
Maximum repetitive peak reverse voltage V
RRM
100 to 1000 (fig.5) V
Maximum average forward rectified current
0.375" (9.5 mm) lead length (fig. 1)
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
I
FSM
30 A
Maximum full load reverse current, full
cycle average, 0.375" (9.5 mm) lead length
at T
A
= 75 °C
I
R(AV)
30 μA
Operating junction and storage
temperature range
T
J
, T
STG
-65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
GP10-4002 GP10-4003 GP10-4004 GP10-4005 GP10-4006 GP10-4007
UNIT
Maximum
instantaneous
forward voltage
1.0 A V
F
1.1 V
Maximum DC
reverse current at
rated DC blocking
voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 50
Typical reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
3.0 μs
Typical junction
capacitance
4.0 V, 1 MHz C
J
8.0 7.0 pF