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SMUN5213T1G

P1-P3P4-P6P7-P9P10-P12
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC144EF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.1
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140 −
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 0.8
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 2.0 mA)
V
i(on)
3.0 1.6 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 32.9 47 61.1
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2213, MMUN2213L, MUN5213, DTC144EE, SDTC144EE, DTC144EM3
Figure 2. V
CE(sat)
vs. I
C
024681
0
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (V)
T
A
= −25°C
75°C
25°C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
−25°C
100
10
1 100
25°C
75°C
50
010203040
3.2
2.8
1.2
0.8
0.4
0
V
R
, REVERSE VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE
= 10 V
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
= −25°C
T
A
= −25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NSBC144EF3
Figure 7. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
10
0.1
0.01
02040
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
1
0.1 10 10
0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.001
048
V
in
, INPUT VOLTAGE (V)
28
Figure 11. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
30
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
25°C
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.8
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10
150°C
−55°C
25°C
150°C
1
10
10
−55°C
25°C
150°C
−55°C
25°C
150°C
2012 16
1
24
0.01
P1-P3P4-P6P7-P9P10-P12

SMUN5213T1G

Mfr. #:
Buy SMUN5213T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
Lifecycle:
New from this manufacturer.
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