SSM6L39TU,LF

P1-P3 P4-P6 P7-P9

SSM6L39TU

2014-03-01

4

Q1 (N-ch MOSFET)

I

D

– V

GS

Gate-source voltage V

GS

(V)

Drain current I

D

(A)

10

0

0.1

1

0.001

0.01

0.0001

2.0

1.0

− 25 °C

Ta = 100 °C

25 °C

Common Source

V

DS

= 3 V

R

DS (ON)

– V

GS

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0

Gate-source voltage V

GS

(V)

5

0

400

200

10

100

300

− 25 °C

Ta = 100 °C

25 °C

I

D

=1.0A

Common Source

R

DS (ON)

– I

D

Drain current I

D

(A)

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0 1

2

3

0

400

200

4

300

100

VGS = 4.0V

2.5 V

Common Source

Ta = 25°C

1.8 V

1.5 V

Ambient temperature Ta (°C)

R

DS (ON)

– Ta

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0

−50 0 50 150

200

100

400

300

100

Common Source

I

D

= 0.3 A / V

GS

= 1.5 V

1.0 A / 4 V

I

D

= 0.8 A / V

GS

= 1.8 V

I

D

= 1.0 A / V

GS

= 2.5 V

Ambient temperature Ta (°C)

V

th

– Ta

Gate threshold voltage V

th

(V)

1.0

0

−50 0 15050 100

0.5

Common Source

V

DS

= 3 V

I

D

= 1 mA

Drain-source voltage V

DS

(V)

I

D

– V

DS

Drain current I

D

(A)

0

3

0

0.2 0.4 0.6

2

1

4

0.8 1.0

VGS = 1.2 V

4.0 V

Common Source

Ta = 25 °C

1.5 V

2.5 V

1.8 V

SSM6L39TU

2014-03-01

5

Q1 (N-ch MOSFET)

|Y

fs

| – I

D

Drain current I

D

(A)

Forward transfer admittance

⎪

Y

fs

⎪

(S)

0.1

10

1

0.1

1

3

0.3

0.01

10

Common Source

V

DS

= 3 V

Ta = 25°C

Total Gate Charge Qg (nC)

Dynamic Input Characteristic

Gate-Source voltage V

GS

(V)

0

0

10

4

8

20

10

6

2

Common Source

I

D

= 1.6A

Ta = 25°C

V

DD

= 10 V

V

DD

= 16 V

Drain reverse current I

DR

(A)

Drain-source voltage V

DS

(V)

I

DR

– V

DS

10

0

0.1

1

0.001

0.01

–0.5 –1.0 –1.5

−25 °C

Ta =100 °C

25 °C

Common Source

V

GS

= 0 V

G

D

S

I

DR

Drain-source voltage V

DS

(V)

C – V

DS

Capacitance C (pF)

1

0.1 1 10 100

10

100

30

50

3

5

500

300

1000

Common Source

Ta = 25°C

f = 1 MHz

V

GS

= 0 V

C

iss

C

oss

C

rss

Drain current I

D

(A)

Switching time t (ns)

t – I

D

1

0.01

100

0.1

1000

1 10

10

t

f

t

on

t

r

Common Source

V

DD

= 10 V

V

GS

= 0 to 2.5 V

Ta = 25 °C

R

G

= 4.7 Ω

t

off

SSM6L39TU

2014-03-01

6

Q2 (P-ch MOSFET)

Gate-source voltage V

GS

(V)

I

D

– V

GS

Drain current I

D

(A)

-10

0

-0.1

-1

-0.001

-0.01

-0.0001

-3.0 -1.0 -2.0

− 25 °C

Ta = 100 °C

25 °C

Common Source

V

DS

= -3 V

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0

Gate-source voltage V

GS

(V)

-4.0

0

R

DS (ON)

– V

GS

1000

800

-8.0-2.0 -6.0

600

400

200

− 25 °C

Ta = 100 °C

25 °C

I

D

=−1.0A

Common Source

Ambient temperature Ta (°C)

V

th

– Ta

Gate threshold voltage V

th

(V)

-1.0

0

−50 0 15050 100

-0.5

Common Source

V

DS

= -3.0 V

I

D

= -1 mA

Drain-source voltage V

DS

(V)

I

D

– V

DS

Drain current I

D

(A)

0

-3

0

-0.2 -0.4 -0.6

-2

-1

-0.8 -1.0

VGS =- 1.2 V

-8.0 V -4.0 V

-1.8 V

-1.5 V

-2.5 V

Common Source

Ta = 25 °C

R

DS (ON)

– I

D

Drain current I

D

(A)

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0 -1

-2

-3

0

1000

800

600

400

200

-1.8 V

Common Source

Ta = 25°C

-2.5 V

VGS = -4.0 V

Ambient temperature Ta (°C)

R

DS (ON)

– Ta

Drain-source ON-resistance

R

DS (ON)

(mΩ)

0

−50 0 50 150 100

1000

800

600

400

200

Common Source

I

D

= −0.1 A / V

GS

= -1.8 V

-1.0 A / -4.0 V

-0.8 A / -2.5 V

P1-P3 P4-P6 P7-P9

SSM6L39TU,LF

Mfr. #:

Buy SSM6L39TU,LF

Manufacturer:

Toshiba

Description:

MOSFET Small Signal MOSFET

Lifecycle:

New from this manufacturer.

Delivery:

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SSM6L39TU,LF