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NUS1204MNT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
Publication Order Number:
NUS1204MN/D
NUS1204MN
Overvoltage Protection IC
with Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP304 overvoltage protection circuit (OVP) with a
−12 V P−Channel power MOSFET. It is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications using an external AC−DC
adapter or a car accessory charger to power a portable product or
recharge its internal batteries. It has a nominal overvoltage threshold
of 4.725 V which makes it ideal for single cell Li−Ion as well as 3/4
cell NiCD/NiMH applications.
Features
• OvervoltageTurn−Off Time of Less Than 20 ms
• Accurate Voltage Threshold of 4.725 V, Nominal
• High Accuracy Undervoltage Threshold of 2.0%
• −12 V Integrated P−Channel Power MOSFET
• Low R
DS(on)
= 75 mW @ −4.725 V
• Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable
Applications
• Maximum Solder Reflow Temperature @ 260°C
• This device is manufactured with a Pb−Free external lead finish only.
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Portable Computers and PDAs
• Cell Phones and Handheld Products
• Digital Cameras
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS1204MNT1G WDFN6
(Pb−Free)
3000 Tape & Ree
l
PIN CONNECTIONS
U2 = Specific Device Code
M = Date Code
G = Pb−Free Package
U2 M
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
2
3
6
5
4
GATE
OUT
GND
DRAIN
SOURCE
IN
(Top View)
1
7
8
NUS1204MN
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2
Figure 1. Simplified Schematic
−
+
IN
SOURCE
GND
OUT
GATE
Schottky
Diode
LOADC1
P−CH
V
ref
AC/DC Adapter of
Accessory Charger
+
DRAIN
PIN FUNCTION DESCRIPTIONS
Pin # Symbol Pin Description
1 GATE Gate pin of the P−Channel Power MOSFET
2 OUT This signal drives the gate of a P−channel Power MOSFET. It is controlled by the voltage level on the IN pin.
When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of V
IN
in less than 20 msec
provided that gate and stray capacitance is less than 12 nF.
3, 7 GND Circuit Ground
4 IN This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold
(V
TH
), the OUT pin will be driven to within 1.0 V of V
IN
, thus disconnecting the P−Channel Power MOSFET.
The nominal threshold level is 4.725 V and this threshold level can be increased with the addition of an external
resistor between the IN pin and the adapter.
5 SOURCE Source pin of the P−Channel Power MOSFET
6, 8 DRAIN Drain pin of the P−Channel Power MOSFET
OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE
IN OUT
<V
th
GND
>V
th
V
IN
NUS1204MN
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3
MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
Rating Pin Symbol Min Max Unit
OUT Voltage to GND 2 V
O
−0.3 12 V
Input Pin Voltage to GND 4 V
input
−0.3 12 V
Maximum Power Dissipation (Note 1) − P
D
− 0.96 W
Thermal Resistance Junction−to−Air (Note 1) OVP IC
P−Channel FET
− R
θ
JA
− 130
130
°C/W
Junction Temperature − T
J
− 150 °C
Operating Ambient Temperature − T
A
−40 85 °C
Storage Temperature Range − T
stg
−65 150 °C
ESD Performance (HBM) (Note 2) 2,3,4 − 2.5 − kV
Drain−to−Source Voltage V
DSS
−12 V
Gate−to−Source Voltage V
GS
−8 8 V
Continuous Drain Current, Steady State, T
A
= 25°C (Note 1) I
D
−0.6 A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, Vcc = 6.0 V, unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
Input Threshold (Pin 4, V
in
Increasing) V
TH
4.630 4.725 4.820 V
Input Threshold Hysteresis (Pin 4, V
in
Decreasing) V
HYS
0.135 0.225 0.315 V
Supply Current (Pin 4)
(V
in
= 4.34 V)
(V
in
= 6.5 V)
I
in
−
−
−
−
3.0
3.9
mA
Minimum Operating Voltage (Pin 4) (Note 3)
(T
A
= 25°C)
(T
A
= −40°C to 85°C)
V
in(min)
−
−
0.55
0.65
0.70
0.80
V
Output Voltage High (V
in
= 8.0 V; I
Source
= 1.0 mA)
Output Voltage High (V
in
= 8.0 V; I
Source
= 0.25 mA)
Output Voltage High (V
in
= 8.0 V; I
Source
= 0 mA)
V
oh
V
in
−1.0
V
in
−0.25
V
in
−0.1
− − V
Output Voltage Low
(Input < 4.5 V; I
Sink
= 0 mA; CNTRL = 0 V)
V
ol
− − 0.1 V
Propagation Delay Input to Output
ms
Complementary Output NCP304 Series
Output Transition, High to Low
Output Transition, Low to High
t
pHL
t
pLH
−
−
10
21
−
60
3. Guaranteed by design.
P1-P3P4-P5

NUS1204MNT1G

Mfr. #:
Buy NUS1204MNT1G
Manufacturer:
ON Semiconductor
Description:
Supervisory Circuits OVERVOLTAGE PROTECT IC
Lifecycle:
New from this manufacturer.
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