OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VEMD2520X01

P1-P3P4-P6P7-P8
VEMD2500X01, VEMD2520X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
1
Document Number: 83294
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD2500X01 and VEMD2520X01 are high speed and high
sensitive PIN photodiodes in a clear epoxy, miniature
surface mount package (SMD) with dome lens. The photo
sensitive area of the chip is 0.23 mm
2
.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 15°
• Package matched with IR emitter series
VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
16758-11
VEMD2500X01VEMD2520X01
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.1
(nm)
VEMD2500X01 12 ± 15 350 to 1120
VEMD2520X01 12 ± 15 350 to 1120
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMD2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 7 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
250 K/W
VEMD2500X01, VEMD2520X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
2
Document Number: 83294
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
32 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
110nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
4pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.3 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
11 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
8.5 12 17 μA
Angle of half sensitivity ϕ ± 15 deg
Wavelength of peak sensitivity λ
p
900 nm
Range of spectral bandwidth λ
0.1
350 to 1120 nm
Rise time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
r
100 ns
Fall time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
f
100 ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
VEMD2500X01, VEMD2520X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
3
Document Number: 83294
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
0.1
1.0
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm²)
16055
V
CE
= 5 V
λ = 950 nm
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21553
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
S
rel
- Relative Sensitivity
94 8248
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.20.4
ϕ - Angular Displacement
P1-P3P4-P6P7-P8

VEMD2520X01

Mfr. #:
Buy VEMD2520X01
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes PHOTO PIN DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet