MPSW45A Datasheet MPSW45ARLRAG, MPSW45AZL1G, MPSW45A | P1-P3

August, 2010 − Rev. 4

1 Publication Order Number:

MPSW45/D

MPSW45, MPSW45A

One Watt Darlington

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage MPSW45

MPSW45A

V

CES

40

50

Vdc

Collector−Base Voltage MPSW45

MPSW45A

V

CBO

50

60

Vdc

Emitter−Base Voltage V

EBO

12 Vdc

Collector Current − Continuous I

C

1.0 Adc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

COLLECTOR 3

BASE

2

EMITTER 1

MARKING DIAGRAM

MPS

W45x

AYWW G

G

MPSW45x = Device Code

x = 45A Devices

A = Assembly Location

Y = Year

WW = Work Week

G =Pb−Free Package

(Note: Microdot may be in either location)

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

MPSW45, MPSW45A

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 100 mAdc, V

BE

= 0) MPSW45

MPSW45A

V

(BR)CES

40

50

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0) MPSW45

MPSW45A

V

(BR)CBO

50

60

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

12 − Vdc

Collector Cutoff Current

(V

CB

= 30 Vdc, I

E

= 0) MPSW45

(V

CB

= 40 Vdc, I

E

= 0) MPSW45A

I

CBO

−

100

nAdc

Emitter Cutoff Current

(V

EB

= 10 Vdc, I

C

= 0)

I

EBO

− 100 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 500 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 1.0 Adc, V

CE

= 5.0 Vdc)

h

FE

25,000

15,000

4,000

150,000

−

Collector−Emitter Saturation Voltage

(I

C

= 1.0 Adc, I

B

= 2.0 mAdc)

V

CE(sat)

− 1.5 Vdc

Base−Emitter Saturation Voltage

(I

C

= 1.0 Adc, I

B

= 2.0 mAdc)

V

BE(sat)

− 2.0 Vdc

Base −Emitter On Voltage

(I

C

= 1.0 Adc, V

CE

= 5.0 Vdc)

V

BE(on)

− 2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

100 − MHz

Collector−Base Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

cb

− 6.0 pF

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

MPSW45, MPSW45A

http://onsemi.com

3

NOISE CHARACTERISTICS

(V

CE

= 5.0 Vdc, T

A

= 25°C)

Figure 2. Noise Voltage

f, FREQUENCY (Hz)

50

100

200

500

20

Figure 3. Noise Current

f, FREQUENCY (Hz)

Figure 4. Total Wideband Noise Voltage

R

S

, SOURCE RESISTANCE (kΩ)

Figure 5. Wideband Noise Figure

R

S

, SOURCE RESISTANCE (kΩ)

5.0

50

70

100

200

30

10

20

1.0

10

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

BANDWIDTH = 1.0 Hz

R

S

≈ 0

I

C

= 1.0 mA

100 mA

10 mA

BANDWIDTH = 1.0 Hz

I

C

= 1.0 mA

100 mA

10 mA

e

n

, NOISE VOLTAGE (nV)

i

n

, NOISE CURRENT (pA)

2.0 5.0 10 20 50 100 200 500 1000

BANDWIDTH = 10 Hz TO 15.7 kHz

I

C

= 10 mA

100 mA

1.0 mA

8.0

10

12

14

6.0

0

4.0

1.0 2.0 5.0 10 20 50 100 200 500 1000

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

10 mA

100 mA

I

C

= 1.0 mA

V

T

, TOTAL WIDEBAND NOISE VOLTAGE (nV)

NF, NOISE FIGURE (dB)

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

MPSW45A

MPSW45A

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