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FGH60N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation
August 2003
FGH60N6S2 Rev. A2
FGH60N6S2
FGH60N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt-
age SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge and plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49346.
Features
• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .77ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . 140nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
Device Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BV
CES
Collector to Emitter Breakdown Voltage 600 V
I
C25
Collector Current Continuous, T
C
= 25°C 75 A
I
C110
Collector Current Continuous, T
C
= 110°C 75 A
I
CM
Collector Current Pulsed (Note 1) 320 A
V
GES
Gate to Emitter Voltage Continuous ±20 V
V
GEM
Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at T
J
= 150°C, Figure 2 200A at 600V
E
AS
Pulsed Avalanche Energy, I
CE
= 20A, L = 1.3mH, V
DD
= 50V 700 mJ
P
D
Power Dissipation Total T
C
= 25°C 625 W
Power Dissipation Derating T
C
> 25°C 5 W/°C
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Package Symbol
C
E
G
TO-247 E
C
G
COLLECTOR
(Back-Metal)
©2003 Fairchild Semiconductor Corporation FGH60N6S2 Rev. A2
FGH60N6S2
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
60N6S2 FGH60N6S2 TO-247 Tube N/A 30
Symbol Parameter Test Conditions Min Typ Max Units
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250µA, V
GE
= 0 600 - - V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0 20 - - V
I
CES
Collector to Emitter Leakage Current V
CE
= 600V T
J
= 25°C - - 250 µA
T
J
= 125°C- - 3 mA
I
GES
Gate to Emitter Leakage Current V
GE
= ± 20V - - ±250 nA
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 40A,
V
GE
= 15V
T
J
= 25°C-1.92.5V
T
J
= 125°C - 1.65 2.2 V
Q
G(ON)
Gate Charge I
C
= 40A,
V
CE
= 300V
V
GE
= 15V - 140 175 nC
V
GE
= 20V - 180 225 nC
V
GE(TH)
Gate to Emitter Threshold Voltage I
C
= 250µA, V
CE
= V
GE
3.5 4.3 5.0 V
V
GEP
Gate to Emitter Plateau Voltage I
C
= 40A, V
CE
= 300V - 6.5 8.0 V
SSOA Switching SOA T
J
= 150°C, R
G
= 3Ω, V
GE
=
15V, L = 100µH, V
CE
= 600V
200 - - A
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 25°C,
I
CE
= 40A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3Ω
L = 100µH
Test Circuit - Figure 20
-18-ns
t
rI
Current Rise Time - 15 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 70 - ns
t
fI
Current Fall Time - 50 - ns
E
ON1
Turn-On Energy (Note 2) - 400 - µJ
E
ON2
Turn-On Energy (Note 2) - 490 - µJ
E
OFF
Turn-Off Energy (Note 3) - 310 450 µJ
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 125°C
I
CE
= 40A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3Ω
L = 100µH
Test Circuit - Figure 20
-27-ns
t
rI
Current Rise Time - 32 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 110 150 ns
t
fI
Current Fall Time - 77 90 ns
E
ON1
Turn-On Energy (Note 2) - 400 450 µJ
E
ON2
Turn-On Energy (Note 2) - 750 850 µJ
E
OFF
Turn-Off Energy (Note 3) - 688 950 µJ
R
θJC
Thermal Resistance Junction-Case TO-247 - - 0.2 °C/W
NOTE:
2.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 20.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation FGH60N6S2 Rev. A2
FGH60N6S2
Typical Performance Curves T
J
= 25°C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
25
0
50
25 75 100 125 150
175
100
75
150
125
PACKAGE LIMITED
TJ = 150
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
100
150
50
200
75
125
25
175
225
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L = 100µH
f
MAX
, OPERATING FREQUENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
100
10
30
1000
T
J
= 125
o
C, R
G
= 3Ω, L = 100µH, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 0.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
100
V
GE
= 10V
50
50
500
V
GE
= 15V
T
C
= 75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
11
12
16
16
12
1100
900
13
14
300
700
9
8
4
0
I
SC
t
SC
10
V
CE
= 390V, R
G
= 3Ω, T
J
= 125
o
C
500
15
2
6
10
14
1000
800
600
400
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0 0.4 0.6 1.20.2 0.8 1.0 1.6 1.81.4 2.0 2.2
0
10
30
70
50
80
40
20
60
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
00.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
30
0.6 1.2
70
50
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 15V
80
T
J
= 25
o
C
0.2
T
J
= 150
o
C
T
J
= 125
o
C
0.8 1.0
40
20
60
1.6 1.81.4 2.0 2.2
P1-P3P4-P6P7-P8

FGH60N6S2

Mfr. #:
Buy FGH60N6S2
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 75A 625W TO247
Lifecycle:
New from this manufacturer.
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