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CPDQ3V3U-HF

P1-P3P4-P5
CPDQ3V3U-HF
Page 1
Comchip Technology CO., LTD.
REV: B
QW-JP031
RoHS Device
Company reserves the right to improve product design , functions and reliability without notice.
Mechanical data
- Case: 0402/SOD-923F small outline plastic package.
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- Weight: 0.001 grams(approx.).
- High temperature soldering guaranteed: 260°C/10 second.
- Epoxy: Meets UL 94V-0
- IEC61000-4-2 Level 4 ESD protection.
- Low Leakage
Features
- Low body height: 0.017”(0.43mm)
- ESD Rating of Class 3(>16kV) per Human Body Mode.
Halogen Free
Circuit Diagram
1 2
- Pin 1: Cathode
- Pin 2: Anode
W
102
PPP
-55 to +150
Typ. peak pulse power
Parameter
Symbol
Value
Unit
Maximum Rating (at TA=25°C unless otherwise noted)
Storage temperature rang
TSTG
°C
kV
ESD
IEC 61000-4-2(Air)
IEC 61000-4-2(Contact)
±8
±15
°C
-55 to +150TJ
Junction temperature rang
ESD capability
ESD
kV
TP = 8/20 us
Conditions
Peak pulse current
TP = 8/20 us
IPP A
9.8
SMD ESD Protection Diode
Dimensions in inches and (millimeter)
0402/SOD-923F
0.007(0.17)
0.033(0.85)
0.030(0.75)
0.041(1.05)
0.037(0.95)
0.010(0.25)
0.006(0.15)
0.026(0.65)
0.022(0.55)
0.003(0.07)
0.016(0.40)
0.013(0.34)
0.006(0.15)
0.002(0.05)
RATING AND CHARACTERISTIC CURVES (CPDQ3V3U-HF)
Page 2
Comchip Technology CO., LTD.
REV: B
QW-JP031
IR , (nA)
Temperature, ( °C )
2
4
6
8
10
0
-55 +150+25
14
16
18
20
12
Fig.2 - Typical Leakage Current
Versus Temperature
Breakdown Voltage , (V) (Vz @ IZ)
Temperature, ( °C )
6.5
6.6
6.7
6.8
6.9
6.3
-55 +150+25
7.1
7.2
7.3
7.4
7.0
Fig.1 - Typical Breakdown Votage
Versus Temperature
6.5
Waveform Acc. IEC 61000-4-5
Fig.3 - 8/20us Peak Pulse Current
Time, (us)
0%
20%
40%
60%
80%
100%
0 5 15 25 3010 20
120%
Percentage of Ipp
Ta=25°C
Peak Valur Ipp
Test Waveform
parameters
tf=8us
td=20us
e
-t
td= t
Ipp/2
Company reserves the right to improve product design , functions and reliability without notice.
Symbol
Typ
Parameter
Min
Max
Unit
Conditions
Breakdown voltage
VBR V
IT = 1mA
5.0
Reverse leakage current
IR
µA
VRWM = 3.3V
2.5
Clamping voltage
VC
V
10.4
IPP = 9.8A, TP = 8/20us
V
Working peak reverse voltage
VRWM
3.3
Junction capacitance
80
CJ
pF
VR = 0V, f = 1MHz
Electrical Characteristics
Forward voltage
VF V
IF = 10mA
0.9
(at TA=25°C unless otherwise noted. VF=0.9V Max.@ IF=10mA for all types)
NOTES:
2. Surge current waveform per Figure 3.
3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
1. FR-5= 1.0*0.75*0.62 in.
.
SMD ESD Protection Diode
D1
D2
D
W1
Reel Taping Specification
o
1
2
0
Page 3
Comchip Technology CO., LTD.
REV: B
QW-JP031
T
C
d
E
P0
P1
F
W
A
B
P
B C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
(mm)
(inch)
0.028 ± 0.002
0.044 ± 0.002
0.019 ± 0.002 7.008 Max.
0.512 ± 0.020
SYMBOL
(mm)
(inch)
0.069 ± 0.004 0.138 ± 0.002
0.079 ± 0.002 0.157 ± 0.004
0.079 ± 0.002
0.70 ± 0.05 1.12 ± 0.05
2.00 ± 0.053.50 ± 0.051.75 ± 0.10
13.00 ± 0.50
0.48 ± 0.05
4.00 ± 0.10 2.00 ± 0.05
178.00 Max.
0402
(SOD-923F)
0402
(SOD-923F)
0.229 ± 0.02
0.009 + 0.001
1.50 + 0.10
- 0
50.00 Min.
1.969 Min
10.90 Max.
0.429 Max.
Trailer Device Leader
400mm (min)160mm (min)
.......
.......
....... ..............
....... ..............
End
Start
Direction of Feed
8.30 Max.
0.327 Max.
0.059 + 0.004
- 0
Company reserves the right to improve product design , functions and reliability without notice.
SMD ESD Protection Diode
P1-P3P4-P5

CPDQ3V3U-HF

Mfr. #:
Buy CPDQ3V3U-HF
Manufacturer:
Comchip Technology
Description:
TVS Diodes / ESD Suppressors SMD ESD Diode 3.3V Uni-Direction
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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