© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1 Publication Order Number:
NTMFS4825NFE/D
NTMFS4825NFE
Power MOSFET
30 V, 171 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Includes Schottky Diode
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• These are Pb−Free Device
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
29
A
T
A
= 85°C 21
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.74 W
Continuous Drain
Current R
q
JA
v
10 sec
T
A
= 25°C
I
D
47
A
T
A
= 85°C 34
Power Dissipation
R
q
JA,
t v 10 sec
T
A
= 25°C P
D
7.3 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
17
A
T
A
= 85°C 12
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.95 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
171
A
T
C
= 85°C 123
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
96.2 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
288 A
Current limited by package T
A
= 25°C I
Dmaxpkg
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−40 to
+150
°C
Source Current (Body Diode) I
S
120 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 50 A
pk
, L = 0.3 mH, R
G
= 25 W)
EAS 375 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
825NFE
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
2.0 mW @ 10 V
171 A
3.0 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4825NFET1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4825NFET3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
140 A
