October 2006 Rev1 1/16
16
R
DS(on)
*Q
g
industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
Switching applications
Internal schematic diagram
General features
Type V
DSS
R
DS(on)
I
D
STD90N03L
STD90N03L-1
30V
30V
0.0057
0.0057
80A
(1)
80A
(1)
1. Pulse width limited by safe operating area
IPAK
3
2
1
1
3
DPAK
STD90N03L
STD90N03L-1
N-channel 30V - 0.005 - 80A - DPAK/IPAK
STripFET™ III Power MOSFET
www.st.com
Order codes
Part number Marking Package Packaging
STD90N03L D90N03L DPAK Tape & reel
STD90N03L-1 D90N03L-1 IPAK Tube
Obsolete Product(s) - Obsolete Product(s)
Content STD90N03L - STD90N03L-1
2/16
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Obsolete Product(s) - Obsolete Product(s)
STD90N03L - STD90N03L-1 Electrical ratings
3/16
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate-source voltage ±20 V
I
D
(1)
1. Value limited by wire bonding
Drain current (continuous) at T
C
= 25°C 80 A
I
D
Drain current (continuous) at T
C
=100°C 64 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25°C 95 W
Derating factor 0.63 W/°C
E
AS
(3)
3. Starting T
j
= 25°C, I
D
=40A, V
DD
=15V
Single pulse avalanche energy 350 mJ
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1.58 °C/W
R
thj-amb
Thermal resistance junction-ambient max 100 °C/W
T
j
Maximum lead temperature for soldering
purpose
275 °C
Obsolete Product(s) - Obsolete Product(s)

STD90N03L-1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Channel 30V Pwr Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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