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MBR3100RLG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
1 Publication Order Number:
MBR3100/D
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• High Surge Capacity
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current T
A
= 100°C
(R
q
JA
= 28°C/W, Refer to P.C. Board Mounting,
Note 3)
I
O
3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Operating and Storage Junction Temperature
Range (Note 1) (Reverse Voltage Applied)
T
J
, T
stg
−65 to
+175
°C
Voltage Rate of Change (Rated V
R
) dv/dt 10 V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MBR3100 Axial Lead 500 Units / Bag
MBR3100RL Axial Lead 1500/Tape & Ree
l
MARKING DIAGRAM
A
MBR
3100
YYWWG
G
http://onsemi.com
MBR3100RLG Axial Lead
(Pb−Free)
1500/Tape & Ree
l
MBR3100G Axial Lead
(Pb−Free)
500 Units / Bag
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location
)
MBR3100
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)
R
q
JA
28 °C/W
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 Amps, T
L
= 25°C)
(i
F
= 3.0 Amps, T
L
= 100°C)
v
F
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
T
L
= 25°C
T
L
= 100°C
i
R
0.6
20
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
I
F
(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0 2.01.0 3.0 4.0 5.0
0.5
1
1.5
2
2.5
P , AVERAGE POWER DISSIPATION (WATTS)
F (AV)
T
A
, AMBIENT TEMPERATURE (°C)
20 1006040 80
4
2
0
dc
120 140 160 180
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
V
R
REVERSE VOLTAGE (VOLTS)
02010 30 40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.20.1 0.3 0.4 0.5
5
0.2
0.1
3
2
1
0.70.6 0.8 0.9
0.3
0.05
0.5
I , REVERSE CURRENT (mA)
R
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
100°C
T
J
= 150°C
50
30
20
10
1 1.2 1.31.1
50 60 80 90 100
0.0001
0.0002
0.0005
25°C
70
100°C
T
J
= 150°C
125°C
1
3
5
6
7
8
3
3.5
4
dc
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selection
s
can be estimated from these curves if V
R
is sufficient below rated V
R
.
SQUARE
WAVE
SQUARE
WAVE
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating
(Mounting Method #3 per Note 3)
Figure 4. Power Dissipation
MBR3100
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3
V
R
, REVERSE VOLTAGE (VOLTS)
020 6040 80
300
400
C, CAPACITANCE (pF)
200
40
80
50
100
Figure 5. Typical Capacitance
T
J
= 25°C
f = 1 MHz
TYPICAL VALUES FOR R
q
JA
IN STILL AIR
Data shown for thermal resistance junction−to−ambient
(R
qJA
) for the mountings shown is to be used as typical
guideline values for preliminary engineering, or in case the
tie point temperature cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4
R
q
JA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 3 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
L L
L
Mounting Method 2
Vector Push−In
Terminals T−28
L
Mounting Method 3
P.C. Board with
2−1/2″ X 2−1/2″
copper surface.
L = 1/2’’
Board Ground Plane
P1-P3P4-P4

MBR3100RLG

Mfr. #:
Buy MBR3100RLG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 100V
Lifecycle:
New from this manufacturer.
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