2016-03-31 2
Version 1.5 BPW 34 FASR
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T
op
; T
stg
-40 ... 100 °C
Reverse voltage V
R
16 V
Reverse voltage
(t < 2 min)
V
R
32 V
Total Power dissipation P
tot
150 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2000 V
Parameter Symbol Values Unit
Photocurrent
(V
R
= 5 V, λ = 870 nm, E
e
=1 mW/cm
2
)
(typ (min)) I
P
50 (≥ 40) µA
Wavelength of max. sensitivity (typ) λ
S max
880 nm
Spectral range of sensitivity (typ) λ
10%
(typ) 730
... 1100
nm
Radiant sensitive area (typ) A 7.02 mm
2
Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(V
R
= 10 V)
(typ (max)) I
R
2 (≤ 30) nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ) S
λ typ
0.65 A / W
Quantum yield of the chip
(λ = 870 nm)
(typ) η 0.93 Electro
ns
/Photon
Open-circuit voltage
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
(typ (min)) V
O
320 (≥ 250) mV
Short-circuit current
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
(typ) I
SC
23 µA
Rise and fall time
(V
R
= 5 V, R
L
= 50 Ω, λ = 850 nm, I
P
= 800 µA)
(typ) t
r
, t
f
0.02 µs
Forward voltage
(I
F
= 100 mA, E = 0)
(typ) V
F
1.3 V
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
(typ) C
0
72 pF
Temperature coefficient of V
O
(typ) TC
V
-2.6 mV / K
