DG9421, DG9422
www.vishay.com
Vishay Siliconix
S14-2339-Rev. H, 08-Dec-14
5
Document Number: 70679
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(Single Supply 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V- = 0 V, V
IN
= 0.4 V
f
TEMP.
b
LIMITS
-40 °C to +85 °C
UNIT
MIN.
d
TYP.
c
MAX.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 - 3 V
Drain-Source
On-Resistance
R
DS(on)
V+ = 2.7 V, V- = 0 V
I
S
= 5 mA, V
D
= 0.5 V, 2.2 V
Room - 7.3 8.8
Ω
Full - - 10.1
Switch Off
Leakage Current
g
I
S(off)
V+ = 3.3 V, V- = 0 V
V
S
= 1, 2 V, V
D
= 2 V, 1 V
Room -1 - 1
nA
Full -10 - 10
I
D(off)
Room -1 - 1
Full -10 - 10
Channel-On
Leakage Current
g
I
D(on)
V+ = 3.3 V, V- = 0 V
V
D
= V
S
= 1 V, 2 V
Room -1 - 1
Full -10 - 10
Digital Control
Input Current, V
IN
Low
e
I
IL
V
IN
under test = 0.4 V Full -1 0.02 1
μA
Input Current, V
IN
High
e
I
IH
V
IN
under test = 2.4 V Full -1 0.02 1
Dynamic Characteristics
Turn-On Time t
ON
R
L
= 300 Ω, C
L
= 35 pF, V
S
= 1.5 V
see figure 2
Room 90 110
ns
Full 125
Turn-Off Time t
OFF
Room 32 84
Full 99
Charge Injection
e
QV
g
= 0 V, R
g
= 0 Ω, C
L
= 1 nF Room 31 pC
Off-Isolation e OIRR R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz Room -60 dB
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 35
pFDrain Off Capacitance
e
C
D(off)
Room 34
Channel On Capacitance
e
C
D(on)
Room 77
