16
FN7493.3
April 24, 2009
V
ON
Slice Circuit
The V
ON
Slice Circuit functions as a three way multiplexer,
switching the voltage on COM between ground, DRN and SRC,
under control of the start-up sequence and the CTL pin.
During the start-up sequence, COM is held at ground via an
NDMOS FET, with ~1k impedance. Once the start-up
sequence has completed, CTL is enabled and acts as a
multiplexer control such that if CTL is low, COM connects to
DRN through a 30internal MOSFET, and if CTL is high,
COM connects to P
OUT
internally via a 5MOSFET.
The slew rate of start-up of the switch control circuit is mainly
restricted by the load capacitance at COM pin as
Equation 21:
RWhere V
g
is the supply voltage applied to DRN or voltage
at P
OUT
, which range is from 0V to 36V. R
i
is the resistance
between COM and DRN or P
OUT
including the internal
MOSFET r
DS(On)
, the trace resistance and the resistor
inserted, R
L
is the load resistance of switch control circuit,
and C
L
is the load capacitance of switch control circuit.
In the “Typical Application Diagram” on page 10, R10, R11
and C15 give the bias to DRN based on Equation 22:
And R12 can be adjusted to adjust the slew rate.
Start-Up Sequence
Figure 15 shows a detailed start up sequence waveform. For
a successful power up, there should be 6 peaks at V
CDLY
.
When a fault is detected, the device will latch off until either
EN is toggled or the input supply is recycled.
When the input is higher than 2.75V; if either EN or ENL is H,
V
REF
turns on. If ENL is H, V
LOGIC
turns on. If EN is H, an
internal current source starts to charge C
CDLY
to an upper
threshold using a fast ramp followed by a slow ramp. Several
more ramps follow, during which time the device checks for
fault conditions. If a fault is found, the sequence is halted.
Initially the boost is not enabled so A
VDD
rises to
V
IN
- V
DIODE
through the output diode. Hence, there is a step
at A
VDD
during this part of the start up sequence. If this step is
not desirable, an external PMOS FET can be used to delay
the output until the boost is enabled internally. The delayed
output appears at A
VDD
.
A
VDD
soft-starts at the beginning of the third ramp. The soft-
start ramp depends on the value of the C
DLY
capacitor. The
range of C
DLY
capacitor value is from 10nF to 220nF. For
C
DLY
of 220nF, the soft-start time is ~8ms.
V
OFF
turns on at the start of the fourth peak, at the same time
DELB gate goes low to turn on the external PMOS to
generate a delayed A
VDD
output.
V
ON
is enabled at the beginning of the sixth ramp.
Once the start-up sequence is complete, the voltage on the
C
DLY
capacitor remains at 1.15V until either a fault is detected
or the EN pin is disabled. If a fault is detected, the voltage on
C
DLY
rises to 2.4V at which point the chip is disabled until the
power is cycled or enable is toggled.
V
t
--------
V
g
R
i
R
L

C
L
-------------------------------------
=
(EQ. 21)
FIGURE 14. NEGATIVE CHARGE PUMP BLOCK DIAGRAM
FAULT
0.2V
CLK
EN
VDD
VSUP
FBN
NOUT
PGND
STOP
PWM
CONTROL
V
REF
R6
40k
C20
820pF
C19
100pF
R7
328k
V
OFF
(-8V)
C13
470nF
D2
D3
C12
220nF
A2
0.4V
A1
M1
M2
1.2MHz
V
DRN
V
ON
R
11
+AVDD R
10
R
10
R
11
+
---------------------------------------------------------------
=
(EQ. 22)
ISL97651
17
FN7493.3
April 24, 2009
A
VDD_delay
Generation Using DELB
DELB pin is an open drain internal N-FET output used to
drive an external optional P-FET to provide a delayed A
VDD
supply which also has no initial pedistal voltage (see
Figure 15 and compare the A
VDD
and A
VDD_delayed
curves). When the part is enabled, the N-FET is held off until
C
DLY
reaches the 4th peak in the start-up sequence. During
this period, the voltage potential of the source and gate of
the external P-FET (M0 in application diagram) should be
almost the same due to the presence of the resistor (R4)
across the source and gate, hence M0 will be off. Please
note that the maximum leakage of DELB in this period is
500nA. To avoid any mis-trigger, the maximum value of R4
should be less than:
Where V
GS(th)_min(M0)
is the minimum value of gate
threshold voltage of M0.
FIGURE 15. START-UP SEQUENCE
V
CDLY
EN
V
REF
V
BOOST
(A
VDD
)
V
LOGIC
V
OFF
DELAYED
V
BOOST
(A
VDD_delay
)
V
ON
A
VDD
SOFT-START
V
OFF
, DELB ON
V
ON
SOFT-START
FAULT DETECTED
CHIP DISABLED
NORMAL
OPERATION
FAULT
PRESENT
START-UP SEQUENCE
TIMED BY C
DLY
V
REF
, V
LOGIC
ON
t
SS
t
START-UP
t
VOFF
V
IN
t
VON
t
VON-SLICE
V
ON SLICE
NOTE: Not to scale
R
4_max
V
GS th_min(M0)
500nA
--------------------------------------------
(EQ. 23)
ISL97651
18
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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FN7493.3
April 24, 2009
After C
DLY
reaches the 4th peak, the internal N-FET is
turned-on and produces an initial current output of
IDELB_ON1 (~50µA). This current allows the user to control
the turn-on inrush current into the A
VDD_delay
supply
capacitors by a suitable choice of C4. This capacitor can
provide extra delay and also filter out any noise coupled into
the gate of M0, avoiding spurious turn-on, however, C4 must
not be so large that it prevents DELB reaching 0.6V by the
end of the start-up sequence on C
DLY
, else a fault time-out
ramp on C
DLY
will start. A value of 22nF is typically required
for C4. The 0.6V threshold is used by the chip's fault
detection system and if V(DELB) is still above 0.6V at the
end of the power sequencing then a fault time-out ramp will
be initiated on C
DLY
.
When the voltage at DELB falls below ~0.6V it's current is
increased to IDELB_ON2 (~1.4mA) to firmly pull the DELB
voltage to ground.
If the maximum V
GS
voltage of M0 is less than the A
VDD
voltage being used, then a resistor may be inserted between
the DELB pin and the gate of M0 such that it's potential
divider action with R4 ensures the gate/source stays below
VGS(M0)max. This additional resistor allows much larger
values of C4 to be used, and hence longer A
VDD
delay,
without affecting the fault protection on DELB.
Component Selection for Start-up Sequencing and
Fault Protection
The C
REF
capacitor is typically set at 220nF and is required
to stabilize the V
REF
output. The range of C
REF
is from
22nF to 1µF and should not be more than five times the
capacitor on C
DEL
to ensure correct start-up operation.
The C
DEL
capacitor is typically 220nF and has a usable
range from 47nF minimum to several microfarads – only
limited by the leakage in the capacitor reaching µA levels.
C
DEL
should be at least 1/5 of the value of C
REF
(see
above). Note with 220nF on C
DEL
the fault time-out will be
typically 50ms and the use of a larger/smaller value will vary
this time proportionally (e.g., 1µF will give a fault time-out
period of typically 230ms).
Over-Temperature Protection
An internal temperature sensor continuously monitors the
die temperature. In the event that the die temperature
exceeds the thermal trip point of +150°C, the device will shut
down. Operation with die temperatures between +125°C and
+150°C can be tolerated for short periods of time, however,
in order to maximize the operating life of the IC, it is
recommended that the effective continuous operating
junction temperature of the die should not exceed +125°C.
Layout Recommendation
The device’s performance including efficiency, output noise,
transient response and control loop stability is dramatically
affected by the PCB layout. PCB layout is critical, especially
at high switching frequency.
There are some general guidelines for layout:
1. Place the external power components (the input
capacitors, output capacitors, boost inductor and output
diodes, etc.) in close proximity to the device. Traces to
these components should be kept as short and wide as
possible to minimize parasitic inductance and resistance.
2. Place V
REF
and V
DC
bypass capacitors close to the pins.
3. Reduce the loop with large AC amplitudes and fast slew
rate.
4. The feedback network should sense the output voltage
directly from the point of load, and be as far away from LX
node as possible.
5. The power ground (PGND) and signal ground (SGND)
pins should be connected at only one point.
6. The exposed die plate, on the underneath of the
package, should be soldered to an equivalent area of
metal on the PCB. This contact area should have multiple
via connections to the back of the PCB as well as
connections to intermediate PCB layers, if available, to
maximize thermal dissipation away from the IC.”
7. To minimize the thermal resistance of the package when
soldered to a multi-layer PCB, the amount of copper track
and ground plane area connected to the exposed die
plate should be maximized and spread out as far as
possible from the IC. The bottom and top PCB areas
especially should be maximized to allow thermal
dissipation to the surrounding air.
8. Minimize feedback input track lengths to avoid switching
noise pick-up.
A demo board is available to illustrate the proper layout
implementation.
ISL97651

ISL97651ARTZ-TK

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Display Drivers & Controllers ISL97651ARTZ 4-CH IN TEGRTD LCD SUPY 1K
Lifecycle:
New from this manufacturer.
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