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VB30M120CHM3/I

P1-P3P4-P4
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jan-17
1
Document Number: 89467
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.52 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, and HM3 suffix meets JESD 201 class 2 whisker
test
Polarity: As marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
120 V
I
FSM
150 A
V
F
at I
F
= 15 A 0.68 V
T
J
max. 150 °C
Package TO-263AB
Diode variations Common cathode
TO-263AB
1
2
K
TMBS
®
PIN 1
PIN 2
K
HEATSINK
VB30M120C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30M120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jan-17
2
Document Number: 89467
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 20 ms
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.60 -
V
I
F
= 7.5 A 0.67 -
I
F
= 15 A 0.87 0.98
I
F
= 5 A
T
A
= 125 °C
0.52 -
I
F
= 7.5 A 0.57 -
I
F
= 15 A 0.68 0.76
Reverse current per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
3.5 - μA
T
A
= 125 °C 2 - mA
V
R
= 120 V
T
A
= 25 °C - 800 μA
T
A
= 125 °C 5 27 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30M120C UNIT
Typical thermal resistance per diode R
JC
2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VB30M120C-E3/4W 1.37 4W 50/tube Tube
TO-263AB VB30M120C-E3/8W 1.37 8W 800/reel Tape and reel
TO-263AB VB30M120C-M3/I 1.37 I 800/reel Tape and reel
TO-263AB VB30M120CHM3/I
(1)
1.37 I 800/reel Tape and reel
Case Temperature (°C)
Average Forward Rectied Current (A)
40
35
25
15
5
0
0 255075100125150175
Resistive or Inductive Load
Mounted on Specic Heatsink
30
20
10
0
2
4
6
8
10
12
14
024681012141618
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T t
p
T
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jan-17
3
Document Number: 89467
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.08
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
MIN.
MIN.
MIN.
0.095 (2.41)
0.105 (2.67)
P1-P3P4-P4

VB30M120CHM3/I

Mfr. #:
Buy VB30M120CHM3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-V40PWM12CHM3/I
Lifecycle:
New from this manufacturer.
Delivery:
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