IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
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2
2
0
F
BTA208X-600F
3Q Hi-Com Triac
22 May 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package This "series F" triac balances the requirements of commutation performance
and gate sensitivity. The "less sensitive gate" "series F" is intended for interfacing with
low power drivers including microcontrollers in higher "noise" environments.
2. Features and benefits
3Q technology for improved noise immunity
Good immunity to false turn-on by dV/dt
High commutation capability with less sensitive gate
High voltage capability
Isolated mounting base package
Less sensitive gate suitable for higher "noise" environment applications
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats
General purpose motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 65 A
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
- - 8 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 25 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 25 mA
NXP Semiconductors
BTA208X-600F
3Q Hi-Com Triac
BTA208X-600F All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 25 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA208X-600F TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A

BTA208X-600F,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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