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MMBT5551LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1 Publication Order Number:
MMBT5550LT1/D
MMBT5550L, MMBT5551L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT5550
MMBT5551
V
CEO
140
160
Vdc
Collector−Base Voltage
MMBT5550
MMBT5551
V
CBO
160
180
Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Electrostatic Discharge
Human Body Model
Machine Model
ESD
> 8000
> 400
V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @T
A
= 25°C
Derate Above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @T
A
= 25°C
Derate Above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
1
x1x M G
G
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT5550LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
SMMBT5551LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBT5551LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SMMBT5551LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
MMBT5550LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
MMBT5550L, MMBT5551L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0) MMBT5550
MMBT5551
V
(BR)CEO
140
160
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) MMBT5550
MMBT5551
V
(BR)CBO
160
180
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 −
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0) MMBT5550
(V
CB
= 120 Vdc, I
E
= 0) MMBT5551
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C) MMBT5550
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C) MMBT5551
I
CBO
−
−
−
−
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− 50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) MMBT5550
MMBT5551
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) MMBT5550
MMBT5551
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc) MMBT5550
MMBT5551
h
FE
60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) MMBT5550
MMBT5551
V
CE(sat)
−
−
−
0.15
0.25
0.20
Vdc
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) MMBT5550
MMBT5551
V
BE(sat)
−
−
−
1.0
1.2
1.0
Vdc
Collector Emitter Cut−off
(V
CB
= 10 V) Both Types
(V
CB
= 75 V)
I
CES
−
−
50
100
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5550L, MMBT5551L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
T
J
= 125°C
-55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
V
CE
= 1.0 V
V
CE
= 5.0 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
I
C
= 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0
2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
10 mA
30 mA
100 mA
5.0
Figure 3. Collector Cut−Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
1
10
-5
0.4 0.3 0.1
10
0
10
-1
10
-2
10
-3
10
-4
0.2 0 0.1 0.2 0.40.3 0.60.5
V
CE
= 30 V
T
J
= 125°C
75°C
25°C
I
C
= I
CES
, COLLECTOR CURRENT (A)μI
C
REVERSE FORWARD
I
C
, COLLECTOR CURRENT (A)
0.30
0.001 0.01 0.1
150°C
I
C
/I
B
= 10
0.0001
Figure 4. V
CE(sat)
0.25
0.20
0.10
0.05
0
V
CE(sat)
, Coll-Emitt Saturation Voltage (V)
0.15
25°C
-55°C
P1-P3P4-P6

MMBT5551LT1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 160V NPN
Lifecycle:
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