VS-12TQ045-N3

VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
1
Document Number: 94137
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 15 A
FEATURES
150 °C T
J
operation
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-12TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
15 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.50 V
I
RM
max. 70 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
16 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 15 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 990 A
V
F
15 A
pk
, T
J
= 125 °C 0.50 V
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
12TQ035PbF
VS-
12TQ035-N3
VS-
12TQ040PbF
VS-
12TQ040-N3
VS-
12TQ045PbF
VS-
12TQ045-N3
UNITS
Maximum DC reverse
voltage
V
R
35 35 40 40 45 45 V
Maximum working peak
reverse voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 120 °C, rectangular waveform 15
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
990
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2.4 A, L = 5.5 mH 16 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2.4 A
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
2
Document Number: 94137
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.56
V
30 A 0.71
15 A
T
J
= 125 °C
0.50
30 A 0.64
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1.75
mA
T
J
= 125 °C 70
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf·in)
maximum 12 (10)
Marking device Case style TO-220AC
12TQ035
12TQ040
12TQ045
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 25-Aug-11
3
Document Number: 94137
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
0.1
10
100
1000
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.8 1.2
1.6
1.8
1
1.41.00.6
0.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 102030 45
0.01
0.1
1
10
100
1000
540
0.001
352515
T
J
= 150 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 20304050
100
1000
10
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-12TQ045-N3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-12TQ045-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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