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RFG40N10

P1-P3P4-P6
©2002 Fairchild Semiconductor Corporation RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
2.5
2.0
1.5
1.0
0.5
0
-50 0 50 100 150 200
NORMALIZED DRAIN TO SOURCE
T
J,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 40A
ON RESISTANCE
DUTY CYCLE = 0.5% MAX
1.50
1.25
1.00
0.75
0
-50 0 50 100 150 200
THRESHOLD VOLTAGE
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE
0.50
0.25
V
GS
= V
DS
I
D
= 250µA
2.0
1.5
1.0
0.5
0
-50 0 50 100 150 200
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA
C
ISS
C
OSS
C
RSS
6000
4000
2000
1000
0
0 5 10 15 20 25
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5000
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈ C
DS
+ C
GD
100
75
50
25
0
10
7.5
5.0
2.5
0
V
GS,
GATE TO SOURCE VOLTAGE (V)
20
I
g(REF)
I
g(ACT)
80
I
g(REF)
I
g(ACT)
t, TIME (µs)
R
L
= 2.5Ω
I
g(REF)
= 2.25mA
V
GS
= 10V
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
©2002 Fairchild Semiconductor Corporation RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
P1-P3P4-P6

RFG40N10

Mfr. #:
Buy RFG40N10
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 100V 40A TO-247
Lifecycle:
New from this manufacturer.
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