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20110307b
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
V
DSS
= 40 V
I
D25
= 180 A
R
DSon typ.
= 1.9 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
MOSFETs
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 40 V
V
GS
±
20 V
I
D25
I
D90
I
D110
T
C
= 25°C
T
C
= 90°C
T
C
= 110°C
180
136
120
A
A
A
I
F25
I
F90
I
F110
T
C
= 25°C (diode)
T
C
= 90°C (diode)
T
C
= 110°C (diode)
182
112
88
A
A
A
S2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L3+
L2L1
L1+ L2+
L3-L1- L2-
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
1)
on chip level at T
VJ
= 25°C
V
GS
= 10 V T
VJ
= 125°C
1.9
2.8
2.5
5.3
mW
mW
V
GS(th)
V
DS
= 20 V; I
D
= 1 mA 2.5 4.5 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 50
5 µA
µA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V 0.2 µA
Q
g
Q
gs
Q
gd
V
GS
= 10 V; V
DS
= 20 V; I
D
= 100 A
110
33
30
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
inductive load
V
GS
= +10/0 V; V
DS
= 15 V
I
D
= 135 A; R
G
= 39 Ω;
T
J
= 125°C
150
240
350
170
ns
ns
ns
ns
E
on
E
off
E
recoff
0.12
0.51
0.003
mJ
mJ
mJ
R
thJC
R
thJH
with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1)
V
DS
= I
D
·(R
DS(on)
+ R
Pin to Chip
)
Preliminary data
Recommended replacement: MTI150WX40GD
