IS31AP2010B-UTLS2-TR

IS31AP2010B
Integrated Silicon Solution, Inc. – www.issi.com
Rev.B, 04/10/2013
4
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at any input pin
-0.3V ~ V
CC
+0.3V
Junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
40°C ~ +85°C
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
V
CC
= 2.7V ~ 5.5V, T
A
= 25°C, unless otherwise noted. (Note 1)
Symbol Parameter Condition Min. Typ. Max. Unit
V
CC
Supply voltage 2.7 5.5 V
|V
OS
|
Output offset voltage
(measured differentially)
V
SDB
= 0V, A
V
= 2V/V 10 mV
I
CC
Quiescent current
V
CC
= 5.5V, no load 2.6
mA
V
CC
= 2.7V, no load 1.2
I
SDB
Shutdown current V
SDB
= 0.4V 1 μA
f
SW
Switching frequency 250 kHz
R
IN
Input resistor Gain 20V/V 15 k
Gain R
IN
= 150k 2 V/V
V
IH
High-level input voltage 1.4 V
V
IL
Low-level input voltage 0.4 V
IS31AP2010B
Integrated Silicon Solution, Inc. – www.issi.com
Rev.B, 04/10/2013
5
ELECTRICAL CHARACTERISTICS
T
A
= 25°C, Gain = 2V/V, C
IN
= 2μF, unless otherwise noted. (Note 2)
Symbol Parameter Condition Min. Typ. Max. Unit
P
O
Output power
THD+N = 10%
f = 1kHz, R
L
= 8
V
CC
= 5.0V 1.68
W
V
CC
= 4.2V 1.2
V
CC
= 3.6V 0.88
THD+N = 10%
f = 1kHz, R
L
= 4
V
CC
= 5.0V 3.0
W
V
CC
= 4.2V 2.0
V
CC
= 3.6V 1.5
THD+N = 1%
f = 1kHz, R
L
= 8
V
CC
= 5.0V 1.4
W
V
CC
= 4.2V 1.0
V
CC
= 3.6V 0.7
THD+N = 1%
f = 1kHz, R
L
= 4
V
CC
= 5.0V 2.4
W
V
CC
= 4.2V 1.68
V
CC
= 3.6V 1.2
THD+N
Total harmonic
distortion plus noise
V
CC
= 4.2V, P
O
= 0.6W, R
L
= 8, f = 1kHz 0.18
%
V
CC
= 4.2V, P
O
= 1.1W, R
L
= 4, f = 1kHz 0.22
V
NO
Output voltage noise
V
CC
= 4.2V, f = 20Hz ~ 20kHz
Inputs AC-grounded
80 μVrms
T
WU
Wake-up time from
shutdown
V
CC
= 3.6V 32 ms
SNR Signal-to-noise ratio P
O
= 1.0W, R
L
= 8, V
CC
= 4.2V 91 dB
PSRR
Power supply rejection
ratio
f = 217HzR
L
= 8
Input grounded
V
CC
= 5.0V -75
dB
V
CC
= 4.2V
-70
V
CC
= 3.6V
-66
Note 1: All parts are production tested at T
A
= 25°C. Other temperature limits are guaranteed by design.
Note 2: Guaranteed by design.
IS31AP2010B
Integrated Silicon Solution, Inc. – www.issi.com
Rev.B, 04/10/2013
6
TYPICAL PERFORMANCE CHARACTERISTIC
Output Power(W)
THD+N(%)
20
10
5
2
1
0.5
0.2
0.1
10m 20m
50m
100m
500m
1
2
3
RL = 8
f = 1kHz
VCC = 3.6V
VCC = 4.2V
VCC = 5.0V
Figure 2 THD+N vs. Output Power
Frequency(Hz)
THD+N(%)
0.05
10
5
2
1
0.5
0.2
0.1
20 50 100
200
500 1k
2k 5k
20k
0.02
0.01
R
L
= 8
V
CC
=3.6V
Po = 0.45W
V
CC
= 5.0V
Po = 0.9W
V
CC
= 4.2V
Po = 0.6W
Figure 4 THD+N vs. Frequency
Frequency(Hz)
PSRR(dB)
20
50 100
200
500 1k
2k 5k
20k
+0
-10 0
-80
-60
-40
-20
R
L
= 8
Input Grouded
V
CC
= 3.6V
V
CC
= 4.2V
V
CC
= 5.0V
Figure 6 PSRR vs. Frequency
Output Power(W)
THD+N(%)
20
10
5
2
1
0.5
0.2
0.1
10m 20m
50m
100m
500m
12
3
R
L
= 4
f = 1kHz
4
V
CC
= 3.6V
V
CC
= 4.2V
V
CC
= 5.0V
Figure 3 THD+N vs. Output Power
Frequency(Hz)
THD+N(%)
0.05
10
5
2
1
0.5
0.2
0.1
20 50 100
200
500 1k
2k 5k
20k
0.02
0.01
R
L
= 4
V
CC
=3.6V
Po = 0.8W
V
CC
= 4.2V
Po = 1.1W
V
CC
= 5.0V
Po = 1.5W
Figure 5 THD+N vs. Frequency
Frequency(Hz)
PSRR(dB)
20 50 100
200
500 1k
2k 5k
20k
-120
+0
-100
-80
-60
-40
-20
R
L
= 4
Input Grouded
V
CC
= 4.2V
V
CC
= 5.0V
V
CC
= 3.6V
Figure 7 PSRR vs. Frequency

IS31AP2010B-UTLS2-TR

Mfr. #:
Manufacturer:
ISSI
Description:
Audio Amplifiers 3W@5V Class-D Audio Pwr Amp
Lifecycle:
New from this manufacturer.
Delivery:
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