IR2304STRPBF

Data Sheet No. PD60200 revB
Features
Floating channel designed for bootstrap operation
to +600V. Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
3.3V, 5V, and 15V input logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Internal 100ns dead-time
Output in phase with input
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
(min) 60 mA/130 mA
V
OUT
10 - 20V
Delay Matching 50 ns
Internal deadtime 100 ns
t
on/off (typ.) 220/220 ns
IR2304(S) & (PbF)
www.irf.com 1
LIN
HIN
VCC
COM
VB
HO
VS
LO
Vcc
HIN
LIN
up to 600V
TO
LOAD
IR2304
Block Diagram
Package
8 Lead SOIC
8-Lead PDIP
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time Ground Pins
2106/2301
COM
21064
HIN/LIN no none
VSS/COM
2108 Internal 540ns COM
21084
HIN/LIN yes
Programmable 0.54~5 µs
VSS/COM
2109/2302 Internal 540ns COM
21094
IN/SD yes
Programmable 0.54~5 µs
VSS/COM
2304
HIN/LIN
yes
Internal 100ns
COM
2106/2301/2108/2109/2302/2304 Feature Comparison
Available in Lead-Free
Description
The IR2304(S) are a high voltage, high speed
power MOSFET and IGBT driver with inde-
pendent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies
enable ruggedized monolithic construction.
The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic.
The output driver features a high pulse cur-
rent buffer stage designed for minimum driver
cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET
or IGBT in the high side configuration which
operates up to 600 volts.
IR2304(S)&(PbF)
2 www.irf.com
Note 1: Logic operational for V
S
of COM -5 to COM +600V. Logic state held for V
S
of COM -5V to COM -V
BS
.
Symbol Definition Min. Max. Units
V
S
High side offset voltage V
B
- 25 V
B
+ 0.3
V
B
High side floating supply voltage -0.3 625
V
HO
High side floating output voltage HO V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage LO -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN, LIN) -0.3 V
CC
+ 0.3
Com Logic ground V
CC
-25 V
CC
+ 0.3
dV
S
/dt Allowable offset voltage SLEW RATE 50 V/ns
P
D
Package power dissipation @ T
A
+25°C 8-Lead SOIC 0.625
8-Lead PDIP 1.0
Rth
JA
Thermal resistance, junction to ambient 8-Lead SOIC 200
8-Lead PDIP 125
T
J
Junction temperature 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
V
°C
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side (HO) output voltage V
S
V
B
V
LO
Low side (LO) output voltage COM V
CC
V
IN
Logic input voltage (HIN, LIN) COM V
CC
V
CC
Low side supply voltage 10 20
T
A
Ambient temperature -40 125 °C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
W
°C/W
IR2304(S)&(PbF)
www.irf.com 3
Symbol Definition Min. Typ. Max. Units Test Conditions
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going 8 8.9 9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going 7.4 8.2 9
V
BSUV-
threshold
V
CCUVH
V
CC
supply undervoltage lockout hysteresis 0.3 0.7
V
BSUVH
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 60 150 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 50 120 240 V
IN
= 0V or 5V
V
IH
Logic “1” input voltage 2.3
——
V
IL
Logic “0” input voltage
0.8
V
OH
High level output voltage, V
BIAS
- V
O
2.8
V
OL
Low level output voltage, V
O
1.2
I
IN+
Logic “1” input bias current 5 40 V
IN
= 5V
I
IN-
Logic “0” input bias current 1.0 2.0 V
IN
= 0V
I
O+
Output high short circuit pulse current 60
I
O-
Output low short circuit pulsed current 130
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and V
S
is applicable to HO and LO.
V
V
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 120 220 320 V
S
= 0V
t
off
Turn-off propagation delay 130 220 330 V
S
= 0V or 600V
t
r
Turn-on rise time 60 200 300
t
f
Turn-off fall time 20 100 170
DT Dead time 80 100 190
MT Delay matching, HS & LS turn-on/off 50
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
S
= COM, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
V
O
= 0V
PW10 µs
ns
µA
I
O
= 20mA
mA
µA

IR2304STRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers Hlf Brdg Drvr Soft Trn On NonInvrt Inpt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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