SMD ESD Protection Diode
CPDU3V3UP
RoHS Device
Features
- Working voltage: 3.3V
- Low leakage current.
- Low operating and clamping voltages.
Mechanical data
- Case: 0603/SOD-523F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any
- Weight: 0.003 gram(approx.).
Circuit Diagram
kV
A
W
±20
5
40
VESD
IPP
PPP
O
C
-55 to +125
-55 to +125
Tj
Operating temperature
ESD per IEC 61000-4-2(Air)
Peak pulse current ( tp = 8/20 us)
Peak pulse power ( tp = 8/20 us)
Parameter
Symbol
Value
Unit
O
Maximum Rating (at TA=25 C unless otherwise noted)
ESD per IEC 61000-4-2(Contact)
Storage temperature
TSTG
±15
O
C
V
V
3.3
VPT
VRWM
Punch-through voltage
Reverse stand-off voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
IPT = 2uA
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Snap-back voltage
ISB = 50mA VSB
Reverse leakage current
VRWM = 3.3V
V
IR
2.8
Clamping voltage
IPP = 1 A, tp=8/20us
VC
V
0.50.05
3.5
5.5
uA
IPP = 5 A, tp=8/20us
VC
V
8.0
IPPR = 1 A, tp=8/20us
VCR
V
2.4
Reverse clamping voltage
Junction capacitance
VR = 0 V, f = 1MHz
Cj
pF
1612
Page 1
Comchip Technology CO., LTD.
REV:A
QW-A7027
Comchip
S M D D i o d e S p e c i a l i s t
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
0603/SOD-523F
- Marking code: E3V3