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PDTC124XK,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PDTC124X_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 16 November 2009 3 of 12
NXP Semiconductors
PDTC124X series
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
3. Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering information
Type number Package
Name Description Version
PDTC124XE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC124XEF SC-89 plastic surface mounted package; 3 leads SOT490
PDTC124XK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC124XM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTC124XS
[1]
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
PDTC124XT - plastic surface mounted package; 3 leads SOT23
PDTC124XU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code
[1]
PDTC124XE 32
PDTC124XEF 32
PDTC124XK 51
PDTC124XM DZ
PDTC124XS TC124X
PDTC124XT *46
PDTC124XU *51
PDTC124X_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 16 November 2009 4 of 12
NXP Semiconductors
PDTC124X series
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 7 V
V
I
input voltage
positive - +40 V
negative - −7V
I
O
output current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-100mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT416
[1]
-150mW
SOT490
[1][2]
-250mW
SOT346
[1]
-250mW
SOT883
[2][3]
-250mW
SOT54
[1]
-500mW
SOT23
[1]
-250mW
SOT323
[1]
-200mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
PDTC124X_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 16 November 2009 5 of 12
NXP Semiconductors
PDTC124X series
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1]
--833K/W
SOT490
[1][2]
--500K/W
SOT346
[1]
--500K/W
SOT883
[2][3]
--500K/W
SOT54
[1]
--250K/W
SOT23
[1]
--500K/W
SOT323
[1]
--625K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 μA
V
CE
=30V; I
B
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 120 μA
h
FE
DC current gain V
CE
=5V; I
C
=5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100μA-0.80.5V
V
I(on)
on-state input voltage V
CE
= 300 mV; I
C
=2mA 2 1.1 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--2.5pF
P1-P3P4-P6P7-P9P10-P12P13-P13

PDTC124XK,115

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Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS NPN 250MW SMT3
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