LT6550/LT6551
5
65501fa
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: A heat sink may be required to keep the junction temperature
below absolute maximum. This depends on the power supply voltage and
how many amplifiers are shorted.
Note 3: The LT6550C/LT6551C are guaranteed to meet specified
performance from 0°C to 70°C and are designed, characterized and
expected to meet specified performance from –40°C to 85°C but are not
tested or QA sampled at these temperatures. The LT6550I/LT6551I are
guaranteed to meet specified performance from –40°C to 85°C.
Note 4: Thermal resistance varies depending upon the amount of PC board
metal attached to Pin 5 of the device. θ
JA
is specified for a 2500mm
2
test
board covered with 2oz copper on both sides.
Note 5: Gain is measured by changing the input voltage, and dividing the
change in output voltage by the change in input voltage.
Note 6: Minimum supply voltage is guaranteed by the PSRR test.
Note 7: The supply current specification includes additional output current
through the internal feedback and gain resistor.
Note 8: Guaranteed by correlation to slew rate at 5V and ±5V.
Note 9: The inputs are protected from ESD with diodes to the supplies.
Note 10: Noise is input referred, including internal gain resistors.
(LT6550 Only) The ● denotes the specifications which apply over
the specified temperature range, otherwise specifications are at T
A
= 25°C. V
S
= ±5V, V
IN
= 0V (Pins 1,2,3) V
GND
= 0V (Pin 4) unless
otherwise noted.
±5V ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
Supply Current per Amplifier 8.5 10.5 mA
● 12 mA
Slew Rate R
L
= 150Ω, V
OUT
= –3V to 3V, 400 600 V/µs
Measured from –2V to 2V
● 300 V/µs
Small Signal –3dB Bandwidth R
L
= 150Ω 90 MHz
Gain Flatness Less than 0.25dB 30 MHz
Gain Matching Any One Channel to Any Other Channel 0.15 dB
Settling Time to 3% R
L
= 150Ω, V
OUT
= 1V to 2.5V 20 ns
Settling Time to 1% R
L
= 150Ω, V
OUT
= 1V to 2.5V 30 ns
% Overshoot V
OUT
= 1V to 2.5V, R
L
= 150Ω 5%
Differential Gain R
L
= 150Ω, Black Level = 0V at Device Output 0.15 %
Differential Phase R
L
= 150Ω, Black Level = 0V at Device Output 0.09 Deg
Channel Separation Measured at 10MHz 60 dB
Supply Current Per Amplifier vs
Supply Voltage
Output Voltage vs Input Voltage
Input Bias Current vs
Temperature
V
CC
(V)
0
SUPPLY CURRENT (mA)
14
12
10
8
6
4
2
0
6550/51 G01
2
1098765
1
34
V
IN
(V)
0
V
OUT
(V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
6550/51 G02
0.4
2.01.81.61.41.21.0
0.2
0.6 0.8
TEMPERATURE (°C)
–50
INPUT BIAS (µA)
–10
–11
–12
–13
–14
–15
–16
–17
–18
–19
–20
0
50
75
6550/51 G03
–25
25
100
125
T
A
= –55°C
T
A
= 25°C
V
S
= 3.3V, 0V
R
L
= 150Ω
V
IN
= 0.75V
R
L
= ∞
GND = 0V
V
S
= 5V, 0V
V
OUT
= 2.5V
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
T
A
= 125°C
5V/3.3V TYPICAL PERFOR A CE CHARACTERISTICS
UW
V
EE
(Pin 5) = 0V (LT6550), GND (Pin 5) = 0V (LT6551)
