BTA212B-600D,118

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DDATA SHEET
Product specification October 2003
DISCRETE SEMICONDUCTORS
BTA212B series D, E and F
Three quadrant triacs
guaranteed commutation
1;3 Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX UNIT
triacs in a plastic envelope suitable for
surface mounting intended for use in BTA212B- 600D
motor control circuits or with other highly BTA212B- 600E 800E
inductive loads. These devices balance BTA212B- 600F
the requirements of commutation V
DRM
Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitive gate" E series and "logic level" I
T(RMS)
RMS on-state current 12 12 A
D series are intended for interfacing with I
TSM
Non-repetitive peak on-state 95 95 A
low power drivers, including micro current
controllers.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
Repetitive peak off-state - 600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 12 A
T
mb
99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
I
2
tI
2
t for fusing t = 10 ms - 45 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A; 100 A/μs
on-state current after dI
G
/dt = 0.2 A/μs
triggering
I
GM
Peak gate current - 2 A
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
13
mb
2
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
October 2003 1 Rev 3.000

BTA212B-600D,118

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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