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BYC30X-600P,127

P1-P3P4-P6P7-P9P10-P10
NXP Semiconductors
BYC30X-600P
Hyperfast power diode
BYC30X-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 4 February 2013 3 / 9
Symbol Parameter Conditions Min Max Unit
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 200 AI
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 220 A
T
stg
storage temperature -65 175 °C
T
j
junction temperature - 175 °C
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
NXP Semiconductors
BYC30X-600P
Hyperfast power diode
BYC30X-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 4 February 2013 4 / 9
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound ; Fig. 5 - - 3.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
- 55 - K/W
003aak764
t
p
(s)
10
-6
1 1010
-1
10
-2
10
-5
10
-3
10
-4
10
-2
10
-3
1
10
-1
10
Z
th(j-h)
(K/W)
10
-4
P
t
t
p
T
t
p
δ =
T
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ
= 0.01
single pulse
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
C
isol
isolation capacitance f = 1 MHz ; from cathode to external
heatsink
- 10 - pF
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 30 A; T
j
= 25 °C; Fig. 6 - 2 2.75 V
NXP Semiconductors
BYC30X-600P
Hyperfast power diode
BYC30X-600P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 4 February 2013 5 / 9
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 30 A; T
j
= 150 °C; Fig. 6 - 1.38 1.8 V
V
R
= 600 V; T
j
= 25 °C - - 10 µAI
R
reverse current
V
R
= 600 V; T
j
= 150 °C - - 600 µA
Dynamic characteristics
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C; Fig. 7
- 50 - nCQ
r
recovered charge
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C; Fig. 7
- 280 - nC
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C; Fig. 7
- - 35 ns
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C; Fig. 7
- - 35 ns
t
rr
reverse recovery time
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C; Fig. 7
- 70 - ns
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C; Fig. 7
- 3.5 - AI
RM
peak reverse recovery
current
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C; Fig. 7
- 7.6 - A
Fig. 6. Forward current as a function of forward
voltage
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 7. Reverse recovery definitions; ramp recovery
P1-P3P4-P6P7-P9P10-P10

BYC30X-600P,127

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers BYC30X-600P,127
Lifecycle:
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