APT10045JLL

C
rss
C
iss
C
oss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 1000 0 10 20 30 40 50
0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
83
50
10
1
16
12
8
4
0
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
1mS
100µS
T
J
=+150°C
T
J
=+25°C
050-7015 Rev D 3-2003
APT10045JLL
Typical Performance Curves
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100µH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
0 10 20 30 40 0 10 20 30 40
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 670V
I
D
= 23A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
V
DS
=500V
V
DS
=200V
V
DS
=800V
I
D
= 23A
t
d(on)
t
d(off)
E
on
E
off
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100µH
V
DD
= 670V
R
G
= 5
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
90%
t
d(off)
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
10%
0
90%
t
f
Switching Energy
10 %
t
d(on)
90%
5 %
t
r
10 %
5 %
Switching Energy
Gate Voltage
T
J
= 125 C
Drain Current
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT15DF120B
V
CE
Figure 20, Inductive Switching Test Circuit
G
V
DD
050-7015 Rev D 3-2003
APT10045JLL

APT10045JLL

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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