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SI7758DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
Si7758DP
www.vishay.com
4
Document Number: 68696
S-81326-Rev. A, 09-Jun-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0 25 50 75 100 125 150
T
J
- Temperature (°C)
- Reverse (A)I
R
10 V
30 V
20 V
10
-3
10
-5
10
-6
10
-4
10
-2
10
-1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.002
0.004
0.006
0.008
0.010
012345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
=20A
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS
Limited
Document Number: 68696
S-81326-Rev. A, 09-Jun-08
www.vishay.com
5
Vishay Siliconix
Si7758DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
32
64
96
128
160
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power, Junction-to-Case
0
25
50
75
100
125
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.6
1.2
1.8
2.4
3.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Vishay Siliconix
Si7758DP
www.vishay.com
6
Document Number: 68696
S-81326-Rev. A, 09-Jun-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68696
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 54 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7758DP-T1-GE3

Mfr. #:
Buy SI7758DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 60A 104W 2.9mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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