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MBR3045STG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 9
1 Publication Order Number:
MBR3045ST/D
MBR3045ST,
MBRB3045CT-1
Switch‐mode
Power Rectifier
Features and Benefits
• Dual Diode Construction − Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
• 45 V Blocking Voltage
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• These are Pb-Free Devices
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight (Approximately): 1.9 Grams (TO−220)
1.5 Grams (TO−262)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Epoxy Meets UL 94 V−0 @ 0.125 in
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Current Per Device
(T
C
= 130°C) Per Diode
I
F(AV)
30
15
A
Peak Repetitive Forward Current, per Diode
(Square Wave, V
R
= 45 V, 20 kHz)
I
FRM
30 A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Current, per Diode
(2.0 ms, 1.0 kHz)
I
RRM
2.0 A
Storage Temperature Range T
stg
−65 to
+175
°C
Operating Junction Temperature (Note 1) T
J
−65 to
+175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
T
J(pk)
175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dP
D
/dT
J
< 1/R
q
JA
.
http://onsemi.com
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
3
1
2, 4
2
AYWW
B3045G
AKA
MARKING
DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Device
I
2
PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B3045CTG
AKA
3
4
1
2
See detailed ordering and shipping information in the packag
e
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MBR3045ST, MBRB3045CT−1
http://onsemi.com
2
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
1.5 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic Symbol Value Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 15 Amp, T
C
= 25°C)
(i
F
= 15 Amp, T
C
= 125°C)
(i
F
= 30 Amp, T
C
= 25°C)
(i
F
= 30 Amp, T
C
= 125°C)
v
F
0.62
0.57
0.76
0.72
V
Instantaneous Reverse Current (Note 2)
(V
R
= 45 Volts, T
C
= 25°C)
(V
R
= 45 Volts, T
C
= 125°C)
I
R
0.2
40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2 Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%
Figure 1. Typical Forward Voltage Figure 2. Maximum Reverse Current
0.60
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
10
V
R
, REVERSE VOLTAGE (VOLTS)
0
0.2
0.04
0.02
0.002
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.2 0.4 0.8
10 20 30
40
0.1
0.4
1.0
0.1
1.0
50
, REVERSE CURRENT (mA)
R
4.0
2.0
10
20
100
40
200
T
J
= 125°C
150°C
25°C
T
J
= 150°C
125°C
100°C
100
0.01
0.004
25°C
75°C
1.61.2 1.4 1.8
Figure 3. Typical Reverse Current
0.60
v
F
, MAXIMUM FORWARD VOLTAGE (VOLTS)
1000
10
i
F
, MAXIMUM FORWARD CURRENT (AMPS)
1.0
0.2 0.4 0.8
0.1
1.0
T
J
= 125°C
150°C
25°C
100
1.61.2 1.4 1.8
MBR3045ST, MBRB3045CT−1
http://onsemi.com
3
Figure 4. Current Derating, Case Figure 5. Current Derating, Ambient
Figure 6. Forward Power Dissipation
110
T
C
, CASE TEMPERATURE (°C)
20
8.0
4.0
0
T
A
, AMBIENT TEMPERATURE (°C)
200
24
16
8.0
0
40
8.0 160
I
F
, AVERAGE FORWARD CURRENT (AMPS)
32
16
12
8.0
4.0
0
12
I
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
120 130 140 170 60 80 180
P
20 4024
28
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
4.0 28 32 36
20
24
SQUARE WAVE
dc
SQUARE WAVE
dc
16
12
24
20
12
4.0
100 120 140
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RATED V
R
APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
R
q
JC
= 1.1°C/W
R
q
JA
= 16°C/W
(With TO-220 Heat Sink)
R
q
JA
= 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
T
J
= 125°C
(CAPACITATIVELOAD)
I
PK
I
AV
+ 5.0
10
20
(RESISTIVELOAD)
I
PK
I
AV
+ p
Figure 7. Capacitance
0
V
R
, REVERSE VOLTAGE (V)
1000
10
10 30 40
C, CAPACITANCE (pF)
100
T
J
= 25°C
f = 1 MHz
50
10000
20
150 160
160
ORDERING INFORMATION
Device Package Shipping
MBR3045STG TO−220
(Pb−Free)
50 Units/Rail
MBRB3045CT−1G TO−262
(Pb−Free)
50 Units/Rail
P1-P3P4-P5

MBR3045STG

Mfr. #:
Buy MBR3045STG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers REC 30A 45V SHTKY
Lifecycle:
New from this manufacturer.
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