CM200DU-24NFH Datasheet CM200DU-24NFH | P1-P3

Feb. 2009

CM200DU-24NFH

APPLICATION

High frequency switching use (30kHz to 60kHz).

Gradient amplifier, Induction heating, power supply, etc.

MITSUBISHI IGBT MODULES

CM200DU-24NFH

HIGH POWER SWITCHING USE

¡IC ...................................................................200A

¡V

CES ......................................................... 1200V

¡Insulated Type

¡2-elements in a pack

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

8.85

(8.25)

(18)

CIRCUIT DIAGRAM

C2E1

E2

C1

G2E2

E1

G1

4

0.5

25.7

0.5

E1

E2

G2

G1

CM

C1

E2

C2E1

LABEL

4-φ6. 5 MOUNTING HOLES

3-M6 NUTS

108

29

+1.0

–0.5

62

18 7 18 7 18

8.5

22

93

±0.25

48

±0.25

2.8

4

7.5

6156

(7)

17.5

14 14 14

25 2.521.525

TC measured point

(7.5)(7.5)

Feb. 2009

2

Gate-emitter threshold voltage

Thermal resistance

*1

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

VCE = VCES, VGE = 0V

±V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

V

CC = 600V, IC = 200A, VGE = 15V

V

CC = 600V, IC = 200A

V

GE = ±15V

R

G = 1.6Ω, Inductive load

I

E = 200A

I

E = 200A, VGE = 0V

IGBT part (1/2 module)

FWDi part (1/2 module)

Case to heat sink, Thermal compound Applied

*2

(1/2 module)

IGBT part (1/2 module)

FWDi part (1/2 module)

I

C = 20mA, VCE = 10V

I

C = 200A, VGE = 15V

V

CE = 10V

V

GE = 0V

1200

±20

200

400

200

400

830

1300

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

400

MITSUBISHI IGBT MODULES

CM200DU-24NFH

HIGH POWER SWITCHING USE

V

A

W

°C

Vrms

N • m

g

1

0.7

6.5

—

32

2.7

0.6

—

300

80

500

150

250

—

3.5

0.15

0.24

—

0.095

*3

0.14

*3

16

mA

µA

nF

nC

ns

µC

V

K/W

Ω

—

5.0

—

900

—

7.5

—

0.04

—

1.6

6V

V

4.5 7.5

ns

Collector cutoff current

Gate leakage current

Collector-emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

Thermal resistance

*4

External gate resistance

I

CES

IGES

Cies

Coes

Cres

QG

td(on)

tr

td(off)

tf

trr (

Note 1

)

Qrr (

Note 1

)

VEC(

Note 1

)

Rth(j-c)Q

R

th(j-c)R

R

th(c-f)

Rth(j-c’)Q

R

th(j-c’)R

R

G

Symbol

Parameter

V

GE(th)

VCE(sat)

*

1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using thermally conductive grease of

λ

= 0.9[W/(m • K)].

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

4 : Case temperature (TC’) measured point is just under the chips.

Note 1. I

E, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

j) does not exceed Tjmax rating.

3. Junction temperature (T

j) should not increase beyond 150°C.

4. No short circuit capability is designed.

G-E Short

C-E Short

Operation (Note 2)

Pulse (Note 2)

Operation (Note 2)

Pulse (Note 2)

T

C = 25°C

T

C’ = 25°C

*4

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Symbol Parameter

Collector current

Emitter current

Mounting torque

Conditions UnitRatings

V

CES

VGES

IC

ICM

IE (

Note 1

)

IEM (

Note 1

)

PC (

Note 3

)

PC’ (

Note 3

)

Tj

Tstg

Viso

—

Unit

Typ.

Limits

Min. Max.

Test conditions

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Feb. 2009

3

MITSUBISHI IGBT MODULES

CM200DU-24NFH

HIGH POWER SWITCHING USE

10

–1

10

0

10

1

10

2

3

5

7

2

3

5

7

2

3

5

7

14

10

–1

2

10

0

357 2

10

1

357 2

10

2

357

V

GE

= 0V

C

ies

C

oes

C

res

0 5101520

V

CE

= 10V

0

1

6

7

8

9

2

3

4

5

050100 150 200 350 400250 300

T

j

= 25°C

T

j

= 125°C

V

GE

= 15V

0

50

100

150

200

250

300

350

400

0246810

0

50

100

150

200

250

300

350

400

V

GE

=20

(V)

T

j

= 25°C

12

9

8

11

10

13

0

2

4

6

8

10

61014188121620

T

j

= 25°C

I

C

= 400A

I

C

= 200A

I

C

= 80A

10

1

10

2

3

5

7

012 435

10

3

2

3

5

7

T

j

= 25°C

T

j

= 125°C

15

T

j

= 25°C

T

j

= 125°C

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(

TYPICAL

)

EMITTER CURRENT I

E

(

A

)

EMITTER-COLLECTOR VOLTAGE V

EC

(

V

)

CAPACITANCE CHARACTERISTICS

(

TYPICAL

)

CAPACITANCE C

ies

, C

oes

, C

res

(

nF

)

COLLECTOR-EMITTER VOLTAGE V

CE

(

V

)

OUTPUT CHARACTERISTICS

(

TYPICAL

)

COLLECTOR CURRENT I

C

(

A

)

TRANSFER CHARACTERISTICS

(

TYPICAL

)

COLLECTOR CURRENT I

C

(

A

)

GATE-EMITTER VOLTAGE V

GE

(

V

)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(

V

)

COLLECTOR CURRENT I

C

(

A

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(

TYPICAL

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(

TYPICAL

)

COLLECTOR-EMITTER VOLTAGE V

CE

(

V

)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(

V

)

GATE-EMITTER VOLTAGE V

GE

(

V

)

PERFORMANCE CURVES

CM200DU-24NFH

CM200DU-24NFH

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