OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2SK3431-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D14600EJ3V0DS
2
2SK3431
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current I
DSS
V
DS
= 40 V, V
GS
= 0
V10
µ
A
Gate Leakage Current I
GSS
V
GS
= ±20
V, V
DS
= 0
V ±10
µ
A
Gate Cut-off Voltage V
GS(off)
V
DS
= 10 V, I
D
= 1
mA 1.5 2.0 2.5 V
Forward Transfer Admittance | y
fs
|V
DS
= 10 V, I
D
= 42
A3060S
R
DS(on)1
V
GS
= 10
V, I
D
= 42
A4.55.6mΩDrain to Source On-state Resistance
R
DS(on)2
V
GS
= 4
V, I
D
= 42
A6.28.9mΩ
Input Capacitance C
iss
V
DS
= 10 V 6100 pF
Output Capacitance C
oss
V
GS
= 0
V 1400 pF
Reverse Transfer Capacitance C
rss
f = 1
MHz 700 pF
Turn-on Delay Time t
d(on)
V
DD
= 20 V, I
D
= 42
A 120 ns
Rise Time t
r
V
GS
= 10
V 1800 ns
Turn-off Delay Time t
d(off)
R
G
= 10
Ω 350 ns
Fall Time t
f
440 ns
Total Gate Charge Q
G
V
DD
= 32
V 110 nC
Gate to Source Charge Q
GS
V
GS
= 10
V18nC
Gate to Drain Charge Q
GD
I
D
= 83
A31nC
Body Diode Forward Voltage V
F(S-D)
I
F
= 83
A, V
GS
= 0
V1.0V
Reverse Recovery Time t
rr
I
F
= 83
A, V
GS
= 0
V65ns
Reverse Recovery Charge Q
rr
di/dt = 100
A/
µ
s 110 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1
s
µ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14600EJ3V0DS
3
2SK3431
TYPICAL CHARACTERISTICS (T
A
= 25°C
)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10
100
R
th(ch-C)
= 1.25˚C/W
µ
µ
R
th(ch-A)
= 83.3˚C/W
FORWARD BIAS SAFE OPERATING AREA
1 10 100
I
D
- Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
1
10
100
1000
0.1
100
µs
1
ms
10
ms
PW
=
10
µ
s
I
D(pulse)
I
D(DC)
Power Dissipation
Limited
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
T
C
= 25˚C
Single Pulse
P
T
- Total Power Dissipation - W
0
0
8020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - ˚C
20
40
60
80
100
140
120
Data Sheet D14600EJ3V0DS
4
2SK3431
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1234
5
6
V
DS
= 10 V
10
1
0.1
100
1000
T
A
= –40˚C
25˚C
75˚C
150˚C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
0.5
T
ch
- Channel Temperature - ˚C
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
−50
0 50 100 150
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1
1
10
100
10 100
0.1
0.01
1
Pulsed
T
A
= 150˚C
75˚C
25˚C
−40˚C
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
2
4
6
8
10
12
14
16
101 100 1000
Pulsed
0
10 V
V
GS
= 4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0.4
0.6
0.8
80
200
160
120
0.2
Pulsed
V
GS
=10 V
V
GS
= 4 V
40
0
P1-P3P4-P6P7-P9P10-P10

2SK3431-AZ

Mfr. #:
Buy 2SK3431-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet