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2SK3431-Z-E1-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D14600EJ3V0DS
5
2SK3431
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
−50
2
4
6
0
50
100 150
I
D
= 42 A
8
10
12
Pulsed
V
GS
= 4 V
V
GS
= 10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
0.1
1000
10000
100000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
100
10
10.1
1000
10000
10 100
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
40 6020 80 100 120 140 160
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
V
GS
V
DD
= 32 V
20 V
8 V
V
DS
Data Sheet D14600EJ3V0DS
6
2SK3431
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
10
100
1000
1
m10
m
V
DD
= 20
V
R
G
= 25 Ω
V
GS
= 20
→
0
V
I
AS
= 65
A
10
µ
100
µ
1
E
A
S
= 423 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Energy Derating Factor - %
25 50
75 100
160
140
120
100
80
60
40
20
0
125 150
Starting T
ch
- Starting Channel Temperature - ˚C
V
DD
= 20 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 65 A
Data Sheet D14600EJ3V0DS
7
2SK3431
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note
This package is produced only in Japan.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
★
P1-P3P4-P6P7-P9P10-P10

2SK3431-Z-E1-AZ

Mfr. #:
Buy 2SK3431-Z-E1-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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