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STTH12S06FP

P1-P3P4-P6
October 2007 Rev 1 1/6
6
STTH12S06
Turbo 2 ultrafast high voltage rectifier
Features and benefits
■ Ultrafast recovery
■ Low reverse recovery current
■ Reduces losses in diode and switching
transistor
■ Low thermal resistance
■ Higher frequency operation
■ Insulated voltage: 1500 V
RMS
Description
ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
Table 1. Main product characteristics
I
F(AV)
12 A
V
RRM
600 V
I
RM (typ.)
6 A
T
j (max)
175 °C
V
F (typ)
1.5 V
t
rr (typ)
14 ns
TO-220FPAC
STTH12S06FP
A
K
Table 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(AV
) Average forward current 12 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 100 A
T
stg
Storage temperature range - 65 + 175 °C
T
j
Maximum operating junction temperature 175 °C
www.st.com
Characteristics STTH12S06
2/6
1 Characteristics
Table 3. Thermal resistances
Symbol Parameter Value Unit
Rth (j-c) Junction to case 4.6 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current V
R
= 600 V
T
j
= 25 °C 30
µA
T
j
= 125 °C 35 400
V
F
Forward voltage drop I
F
= 12 A
T
j
= 25 °C 3.4
V
T
j
= 150 °C 1.5 1.9
Table 5. Dynamic electrical characteristics
Symbol Tests conditions Min. Typ. Max. Unit
t
rr
I
F
= 1 A dI
F
/dt = - 200 A/µs V
R
= 30 V 14 21 ns
I
RM
V
R
= 400 V I
F
= 12A
dI
F
/dt = - 200 A/µs
T
j
= 125 °C
6.0 8.0 A
S factor
V
R
= 200 V I
F
= 12A
dI
F
/dt = - 200 A/µs
0.3
Q
rr
160 nC
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
0 2 4 6 8 10 12 14 16
P(W)
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0
10
20
30
40
50
60
70
80
90
100
01234567
I
FM
(A)
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
T
j
=150°C
(Typical values)
V
FM
(V)
STTH12S06 Characteristics
3/6
Figure 3. Relative variation of thermal
impedance, junction to case,
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z
th(j-c
)
/
R
th(j-c)
Single pulse
t
p
(s)
0
1
2
3
4
5
6
7
8
9
10
11
12
10 100 1000
I
RM
(A)
I
F
= 12 A
V
R
=400V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
Figure 5. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
0
20
40
60
80
100
120
0 50 100 150 200 250 300 350 400 450 500 550 600
t
RR
(ns)
I
F
= 12 A
V
R
=400V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
10 100 1000
Q
RR
(nC)
I
F
= 12 A
V
R
=400V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
C(pF)
10
100
1 10 100 1000
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
P1-P3P4-P6

STTH12S06FP

Mfr. #:
Buy STTH12S06FP
Manufacturer:
STMicroelectronics
Description:
Rectifiers Turbo II Ultrafast High Volt Rec
Lifecycle:
New from this manufacturer.
Delivery:
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