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October 2007 Rev 1 1/6
6
STTH12S06
Turbo 2 ultrafast high voltage rectifier
Features and benefits
■ Ultrafast recovery
■ Low reverse recovery current
■ Reduces losses in diode and switching
transistor
■ Low thermal resistance
■ Higher frequency operation
■ Insulated voltage: 1500 V
RMS
Description
ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
Table 1. Main product characteristics
I
F(AV)
12 A
V
RRM
600 V
I
RM (typ.)
6 A
T
j (max)
175 °C
V
F (typ)
1.5 V
t
rr (typ)
14 ns
TO-220FPAC
STTH12S06FP
A
K
Table 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(AV
) Average forward current 12 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 100 A
T
stg
Storage temperature range - 65 + 175 °C
T
j
Maximum operating junction temperature 175 °C
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