SIHA15N65E-GE3 Datasheet SIHA15N65E-GE3 | P1-P3

SiHA15N65E

www.vishay.com

Vishay Siliconix

S17-0898-Rev. A, 12-Jun-17

1

Document Number: 91979

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R

on

x Q

g

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 Ω, I

AS

= 4.5 A

c. 1.6 mm from case

d. I

SD

≤ I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C

e. Limited by maximum junction temperature

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 700

R

DS(on)

max. (Ω) at 25 °C V

GS

= 10 V 0.28

Q

g

max. (nC) 96

Q

gs

(nC) 11

Q

gd

(nC) 21

Configuration Single

N-Channel MOSFET

G

D

S

Thin-Lead TO-220 FULLPAK

S

D

G

ORDERING INFORMATION

Package Thin-Lead TO-220 FULLPAK

Lead (Pb)-free and halogen-free

SiHA15N65E-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

650

V

Gate-source voltage V

GS

± 30

Continuous drain current (T

J

= 150 °C)

e

V

GS

at 10 V

T

C

= 25 °C

I

D

15

AT

C

= 100 °C 10

Pulsed drain current

a

I

DM

38

Linear derating factor 0.27 W/°C

Single pulse avalanche energy

b

E

AS

286 mJ

Maximum power dissipation P

D

34 W

Operating junction and storage temperature range T

J

, T

stg

-55 to +150 °C

Drain-source voltage slope T

J

= 125 °C

dV/dt

70

V/ns

Reverse diode dV/dt

d

23

Soldering recommendations (peak temperature)

c

For 10 s 300 °C

Mounting torque M3 screw 0.6 Nm

SiHA15N65E

www.vishay.com

Vishay Siliconix

S17-0898-Rev. A, 12-Jun-17

2

Document Number: 91979

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient R

thJA

-65

°C/W

Maximum junction-to-case (drain) R

thJC

-3.7

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 650 - - V

V

DS

temperature coefficient ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.75 - V/°C

Gate-source threshold voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2 - 4 V

Gate-source leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero gate voltage drain current I

DSS

V

DS

= 650 V, V

GS

= 0 V - - 1

μA

V

DS

= 520 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-source on-state resistance R

DS(on)

V

GS

= 10 V I

D

= 8 A - 0.23 0.28 Ω

Forward transconductance g

fs

V

DS

= 30 V, I

D

= 8 A - 5.6 - S

Dynamic

Input capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

328 1640 2460

pF

Output capacitance C

oss

16 80 120

Reverse transfer capacitance C

rss

0.8 4 8

Effective output capacitance, energy

C

o(er)

V

DS

= 0 V to 520 V, V

GS

= 0 V

-63-

Effective output capacitance, time related

b

C

o(tr)

-213-

Total gate charge Q

g

V

GS

= 10 V I

D

= 8 A, V

DS

= 520 V

-4896

nC Gate-source charge Q

gs

-11-

Gate-drain charge Q

gd

-21-

Turn-on delay time t

d(on)

V

DD

= 520 V, I

D

= 8 A,

V

GS

= 10 V, R

g

= 9.1 Ω

-1836

ns

Rise time t

r

-2448

Turn-off delay time t

d(off)

-4896

Fall time t

f

-2550

Gate input resistance R

g

f = 1 MHz, open drain 0.2 0.6 1.2 Ω

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--15

A

Pulsed diode forward current I

SM

--38

Diode forward voltage V

SD

T

J

= 25 °C, I

S

= 8 A, V

GS

= 0 V - - 1.2 V

Reverse recovery time t

rr

T

J

= 25 °C, I

F

= I

S = 8 A

,

dI/dt = 100 A/μs

, V

R

= 400 V

-325- ns

Reverse recovery charge Q

rr

-4.6-μC

Reverse recovery current I

RRM

-20- A

S

D

G

SiHA15N65E

www.vishay.com

Vishay Siliconix

S17-0898-Rev. A, 12-Jun-17

3

Document Number: 91979

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

10

20

30

40

50

0 5 10 15 20 25 30

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

T

J

= 25 °C

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

5

10

15

20

25

30

0 5 10 15 20 25 30

T

J

= 150 °C

5 V

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

BOTTOM 6 V

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

10

20

30

40

50

0 5 10 15 20

25

T

J

= 25 °C

T

J

= 150 °C

V

DS

= 30.8 V

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20

0

20 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

V

GS

= 10 V

I

D

= 8 A

V

DS

, Drain-to-Source Voltage (V)

Capacitance (pF)

100

10

0 200

400

10 000

1

1000

100 300

500 600

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

ġ

Q

g

, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0

24

20

12

8

0 20 40 60 80

V

DS

= 520 V

V

DS

= 325 V

V

DS

= 130 V

100

SIHA15N65E-GE3

SIHA15N65E-GE3

Products related to this Datasheet