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IDC08S60CEX1SA3

P1-P3P4-P5
IDC08S60CE
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
2
nd
generation thinQ!
TM
SiC Schottky Diode
Features:
Revolutionary Semiconductor Material -
Silicon Carbide
Switching Behaviour Benchmark
No Reverse Recovery / No Forward
Recovery
Temperature Independent Switching
Behaviour
Qualified According to JEDEC
1)
Based on
Target Applications
Applications:
SMPS, PFC, snubber
A
C
Chip Type V
R
I
Fn
Die Size Package
IDC08S60CE
600V 8A 1.658 x 1.52 mm
2
sawn on foil
Mechanical Parameters
Die size 1.658x 1.52
mm
2
Area total 2.52
Anode pad size 1.421 x 1.283
Thickness 355 µm
Wafer size 100 mm
Max. possible chips per wafer 2682
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal Ni Ag –system
Die bond Electrically conductive epoxy glue and soft solder
Wire bond
Al, 500µm
Reject ink dot size
0.65mm; max 1.2mm
Storage environment
1)
for original and
sealed MBB bags
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
for open MBB
bags
Acc. to IEC60721-3-3: Atmosphere >99% Nitrogen or inert
gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
1)
Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon
Technologies)
Designed for climate condition under operation according to IEC60721-3-3, class 3K3
IDC08S60CE
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage
V
RRM
T
vj
=25 C
600
V
DC blocking voltage
V
DC
600
Continuous forward current,
limited by T
vjmax
I
F
T
vj
< 150°C
8
A
Surge non repetitive forward current,
sine halfwave
I
F,SM
T
C
=25C, t
P
=10 ms
59
T
C
=150C, t
P
=10 ms
Repetitive peak forward current,
limited by thermal resistance R
th
I
F,RM
T
C
= 100C, T
vj
=150C,
D=0.1
32
Non-repetitive peak forward current
I
F,ma x
T
C
=25C, t
P
=10µs
264
i
2
t value
dti
2
T
C
=25C, t
P
=10 ms
17
A
2
s
T
C
=150C, t
P
=10 ms
Operating junction and storage
temperature range
T
vj
,
T
stg
-55...+175
C
Static Characteristics (tested on wafer), T
vj
= 25 °C
Parameter Symbol Conditions
Value
Unit
min. Typ. max.
Reverse current
I
R
V
R
=600V
1 100 µA
Diode forward voltage
V
F
I
F
=8A
1.5 1.7 V
Static Characteristics (not subject to production test - verified by design / characterization)
Parameter Symbol
Conditions
Value
Unit
min. Typ. max.
Reverse current
I
R
V
R
=600V, T
vj
=150C
4 1000 µA
Diode forward voltage
V
F
I
F
=8A, T
vj
=150C
1.7 2.1 V
IDC08S60CE
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
Dynamic Characteristics (not subject to production test - verified by design / characterization)
Parameter Symbol Conditions
Value
Unit
min. Typ. max.
Total capacitive charge
3)
Q
C
I
F
<=I
F,max
di/dt=200A/s
V
R
=400V
T
vj
=150°C
19
nC
Switching time
2)
t
c
T
vj
=150°C
<10 ns
Total capacitance
C
f=1MHz
V
R
=1V
310
pFV
R
=300V
50
V
R
=600V
50
1)
J-STD20 and JESD22
2)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
vj
=150°C,
I
LOAD
and di/dt), different from t
rr
, which is dependent on T
vj
=150°C, I
LOAD
, di/dt. No reverse recovery time
constant t
rr
due to absence of minority carrier inject.
3)
Only capacitive charge occurring, guaranteed by design (independent from T
vj
, I
LOAD
and di/dt).
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and
mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet IDT08S60C Rev. 2.1
P1-P3P4-P5

IDC08S60CEX1SA3

Mfr. #:
Buy IDC08S60CEX1SA3
Manufacturer:
Infineon Technologies
Description:
DIODE SIC 600V 8A SAWN WAFER
Lifecycle:
New from this manufacturer.
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