IDC08S60CE
Edited by INFINEON Technologies, IFAG IPC TD VLS, L4714E, Edition 1.2, 05.09.2012
2
nd
generation thinQ!
TM
SiC Schottky Diode
Features:
Revolutionary Semiconductor Material -
Silicon Carbide
Switching Behaviour Benchmark
No Reverse Recovery / No Forward
Recovery
Temperature Independent Switching
Behaviour
Qualified According to JEDEC
1)
Based on
Target Applications
Applications:
SMPS, PFC, snubber
C
Chip Type V
R
I
Fn
Die Size Package
IDC08S60CE
600V 8A 1.658 x 1.52 mm
2
sawn on foil
Mechanical Parameters
Die size 1.658x 1.52
mm
2
Area total 2.52
Anode pad size 1.421 x 1.283
Thickness 355 µm
Wafer size 100 mm
Max. possible chips per wafer 2682
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal Ni Ag –system
Die bond Electrically conductive epoxy glue and soft solder
Wire bond
Al, 500µm
Reject ink dot size
0.65mm; max 1.2mm
Storage environment
1)
for original and
sealed MBB bags
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
for open MBB
bags
Acc. to IEC60721-3-3: Atmosphere >99% Nitrogen or inert
gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
1)
Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products Supplied by Infineon
Technologies)
Designed for climate condition under operation according to IEC60721-3-3, class 3K3