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MIC5013YN

P1-P3P4-P6P7-P9P10-P12P13-P15
July 2005 1 MIC5013
MIC5013 Micrel, Inc.
Fault
V+
Gate
1
2
3
4
8
MIC5013
Gnd
7
6
5
Thresh
Sense
Source
Input
=24V
IRCZ44
(S=2590,
R=11mΩ)
10µF
43
Ω
20k
Ω
4.3k
Ω
R
R 1
LOAD
Control Input
V
+
+
S
R1=
100m
V
S R R
(SR+R )
V
+
SR( +100mV)
R I – ( +100mV)
R =
R = –1000
2200
V
TR I P
S
For this example:
=30A (trip current)I
L
=100mV
V
TR I P
S
S
TH
V
TR I P
V
TR I P
L
R
TH
S E N S E
S O U R C E
KEL VI N
MIC5013
Protected High- or Low-Side MOSFET Driver
General Description
The MIC5013 is an 8-pin MOSFET driver with over-current
shutdown and a fault flag. It is designed to drive the gate of
an N-channel power MOSFET above the supply rail high-side
power switch applications. The MIC5013 is compatible with
standard or current-sensing power MOSFETs in both high-
and low-side driver topologies.
The MIC5013 charges a 1nF load in 60µs typical and protects
the MOSFET from over-current conditions. The current sense
trip point is fully programmable and a dynamic threshold
allows high in-rush current loads to be started. A fault pin
indicates when the MIC5013 has turned off the FET due to
excessive current.
Other members of the Micrel driver family include the MIC5011
minimum parts count driver and MIC5012 dual driver.
Features
• 7V to 32V operation
• Less than 1µA standby current in the “OFF” state
• Available in small outline SOIC packages
• Internal charge pump to drive the gate of an N-channel
power FET above supply
• Internal zener clamp for gate protection
• 60µs typical turn-on time to 50% gate overdrive
• Programmable over-current sensing
• Dynamic current threshold for high in-rush loads
• Fault output pin indicates current faults
• Implements high- or low-side switches
Applications
• Lamp drivers
• Relay and solenoid drivers
• Heater switching
• Power bus switching
• Motion control
Typical Application
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
Note: The MIC5013 is ESD sensitive.
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
Ordering Information
Part Number Temperature
Range
Package
Standard Pb-Free
MIC5013BN MIC5013YN –40ºC to +85ºC 8-pin Plastic
DIP
MIC5013BM MIC5013YM –40ºC to +85ºC 8-pin SOIC
Figure 1. High-Side Driver with
Current-Sensing MOSFET
MIC5013 Micrel, Inc.
MIC5013 2 July 2005
Pin Description (Refer to Figures 1 and 2)
Pin Number Pin Name Pin Function
1 Input Resets current sense latch and turns on power MOSFET when taken above
threshold (3.5V typical). Pin 1 requires <1µA to switch.
2 Threshold Sets current sense trip voltage according to:
R
=
+ 1000
2200
V
TR I P
TH
where R
TH
to ground is 3.3k to 20kΩ. Adding capacitor C
TH
increases the
trip voltage at turn-on to 2V. Use C
TH
=10µF for a 10ms turn-on time con-
stant.
3 Sense The sense pin causes the current sense to trip when V
SENSE
is V
TRIP
above
V
SOURCE
. Pin 3 is used in conjunction with a current shunt in the source of
a 3 lead FET or a resistor R
S
in the sense lead of a current sensing FET.
4 Source Reference for the current sense voltage on pin 3 and return for the gate
clamp zener. Connect to the load side of current shunt or kelvin lead of cur
-
rent sensing FET. Pins 3 and 4 can safely swing to –10V when turning off
inductive loads.
5 Ground
6 Gate Drives and clamps the gate of the power FET. Pin 6 will be clamped to ap
-
proximately –0.7V by an internal diode when turning off inductive loads.
7 V
+
Supply pin; must be decoupled to isolate from large transients caused by
the power FET drain. 10µF is recommended close to pins 7 and 5.
8 Fault Outputs status of protection circuit when pin 1 is high. Fault low indicates
normal operation; fault high indicates current sense tripped.
Absolute Maximum Ratings (Note 1, 2)
Input Voltage, Pin 1 –10 to V
+
Threshold Voltage, Pin 2 –0.5 to +5V
Sense Voltage, Pin 3 –10V to V
+
Source Voltage, Pin 4 –10V to V
+
Current into Pin 4 50mA
Gate Voltage, Pin 6 –1V to 50V
Supply Voltage (V
+
), Pin 7 –0.5V to 36V
Fault Output Current, Pin 8 –1mA to +1mA
Junction Temperature 150°C
Operating Ratings (Notes 1, 2)
Power Dissipation 1.25W
θ
JA
(Plastic DIP) 100°C/W
θ
JA
(SOIC) 170°C/W
Ambient Temperature: B version –40°C to +85°C
Storage Temperature –65°C to +150°C
Lead Temperature 260°C
(Soldering, 10 seconds)
Supply Voltage (V
+
), Pin 7 7V to 32V high side
7V to 15V low side
Fault
V+
Gate
1
2
3
4
8
MIC5013
Gnd
7
6
5
Thresh
Sense
Source
Input
Pin Configuration
July 2005 3 MIC5013
MIC5013 Micrel, Inc.
Electrical Characteristics (Note 3, 5)
Test circuit. T
A
= –55°C to +125°C, V
+
= 15V, all switches open, unless otherwise specified.
Parameter Conditions Min Typical Max Units
Supply Current, I
7
V
+
= 32V V
IN
= 0V, S4 closed 0.1 10 µA
V
IN
= V
S
= 32V 8 20 mA
Logic Input Voltage, V
IN
V
+
= 4.75V Adjust V
IN
for V
GATE
low 2 V
Adjust V
IN
for V
GATE
high 4.5 V
V
+
=15V Adjust V
IN
for V
GATE
high 5.0 V
Logic Input Current, I
1
V+ = 32V V
IN
= 0V –1 µA
V
IN
= 32V 1 µA
Input Capacitance Pin 1 5 pF
Gate Drive, V
GATE
S1, S2 closed, V
+
= 7V, I
6
= 0 13 15 V
V
S
= V+, V
IN
= 5V V
+
= 15V, I
6
= 100 µA 24 27 V
Zener Clamp, S2 closed, V
IN
= 5V V+ = 15V, V
S
= 15V 11 12.5 15 V
V
GATE
– V
SOURCE
V
+
= 32V, V
S
= 32V 11 13 16 V
Gate Turn-on Time, t
ON
V
IN
switched from 0 to 5V; measure time 60 200
µs
(Note 4) for V
GATE
to reach 20V
Gate Turn-off Time, t
OFF
V
IN
switched from 5 to 0V; measure time 4 10 µs
for V
GATE
to reach 1V
Threshold Bias Voltage, V
2
I
2
= 200 µA 1.7 2 2.2 V
Current Sense Trip Voltage, S2 closed, V
IN
= 5V, V
+
= 7V, S4 closed 75 105 135 mV
V
SENSE
– V
SOURCE
Increase I
3
I
2
= 100 µA V
S
= 4.9V, S4 open 70 100 130 mV
V
+
= 15V S4 closed 150 210 270 mV
I
2
= 200 µA V
S
= 11.8V, S4 open 140 200 260 mV
V
+
= 32V V
S
= 0V, S4 open 360 520 680 mV
I
2
= 500 µA V
S
= 25.5V, S4 open 350 500 650 mV
Peak Current Trip Voltage, S3, S4 closed, 1.6 2.1 V
V
SENSE
– V
SOURCE
V
+
= 15V, V
IN
= 5V
Fault Output Voltage, V
8
V
IN
= 0V, I
8
= –100 µA 0.4 1 V
V
IN
= 5V, I
8
= 100 µA, current sense tripped 14 14.6 V
Note 1. Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings.
Note 2. The MIC5010 is ESD sensitive.
Note 3. Minimum and maximum Electrical Characteristics are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the entire
range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4. Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information.
Note 5. Specification for packaged product only.
P1-P3P4-P6P7-P9P10-P12P13-P15

MIC5013YN

Mfr. #:
Buy MIC5013YN
Manufacturer:
Microchip Technology / Micrel
Description:
Gate Drivers High Side MOSFET Predriver
Lifecycle:
New from this manufacturer.
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