TPC6111
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
TPC6111
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: R
DS (ON)
= 33 mΩ (typ.)
• Low leakage current: I
DSS
= −10 μA (max) (V
DS
= −20 V)
• Enhancement mode: V
th
= −0.3 to −1.0 V
(V
DS
= −10 V, I
D
= −1mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
−20
V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
−20
V
Gate-source voltage V
GSS
± 8
V
DC (Note 1)
I
D
−5.5
Drain current
Pulse (Note 1)
I
DP
−22
A
Drain power dissipation (t = 5 s)
(Note 2a)
P
D
2.2 W
Drain power dissipation (t = 5 s)
(Note 2b)
P
D
0.7 W
Single pulse avalanche energy (Note 3) E
AS
5.1 mJ
Avalanche current I
AR
−2.8 A
Repetitive avalanche energy (Note 4) E
AR
0.019
mJ
Channel temperature T
ch
150
°C
Storage temperature range T
stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
R
th (ch-a)
56.8 °C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R
th (ch-a)
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
6 4
1 2 3
5
Start of commercial production
2009-04
