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NST847BF3T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 1
1 Publication Order Number:
NST847BF3/D
NST847BF3T5G
NPN General Purpose
Transistor
The NST847BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• h
FE
, 200−450
• Low V
CE(sat)
, ≤ 0.25 V
• Reduces Board Space
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Base Voltage V
CBO
50 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
432 °C/W
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
360 °C/W
Thermal Resistance,
Junction−to−Lead 3
R
Y
JL
(Note 2)
143 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm
2
1 oz, copper traces.
2. 500 mm
2
1 oz, copper traces.
SOT−1123
CASE 524AA
STYLE 1
1
NST847BF3T5G
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
†
NST847BF3T5G SOT−1123
(Pb−Free)
8000/Tape & Reel
4 = Device Code
M = Date Code
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
3
1
COLLECTOR
3
1
BASE
2
EMITTER
4 M
NST847BF3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mA) V
(BR)CEO
45 − − V
Collector−Emitter Breakdown Voltage (I
C
= 10 mA, V
EB
= 0)
V
(BR)CES
50 − − V
Collector−Base Breakdown Voltage (I
C
= 10 mA)
V
(BR)CBO
50 − − V
Emitter−Base Breakdown Voltage (I
E
= 1.0 mA)
V
(BR)EBO
6.0 − − V
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
h
FE
−
200
150
290
−
450
−
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector−Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage (I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) C
obo
− − 4.5 pF
Input Capacitance (V
EB
= 0.5 V, I
C
= 0 mA, f = 1.0 MHz) C
ibo
− − 10 pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
100
0
0.0001
0.02
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
0.18
0.0001 0.01
I
C
, COLLECTOR CURRENT (A)
0.04
0.001
0.06
500
600
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.08
0.10
I
C
/I
B
= 10
V
CE(sat)
= 150°C
0.10.010.001
25°C
−55°C
400
h
FE
, DC CURRENT GAIN (V)
300
200
0.1
150°C (5.0 V)
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
0.12
0.14
0.16
NST847BF3T5G
http://onsemi.com
3
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.8
0.9
1.0
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
Figure 5. Saturation Region Figure 6. Input Capacitance
I
b
, BASE CURRENT (A) V
eb
, EMITTER BASE VOLTAGE (V)
0.010.0010.0001
0
0.1
0.2
0.4
0.5
0.7
0.9
1.0
4.54.02.51.5 2.01.00.50
3.5
4.0
4.5
5.5
6.0
7.0
Figure 7. Output Capacitance
V
cb
, COLLECTOR BASE VOLTAGE (V)
302520151050
0.7
1.1
1.5
1.9
2.3
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER TURN−ON
VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
C
ibo
, INPUT CAPACITANCE (pF)
C
obo
, OUTPUT CAPACITANCE (pF)
0.7
I
C
/I
B
= 10
−55°C
25°C
150°C
0.8
V
CE
= 2.0 V
25°C
0.3
0.6
0.8
I
C
= 100 mA
50 mA
30 mA
10 mA
3.0 3.5 5.0
5.0
6.5
C
ib
C
ob
−55°C
150°C
0.00001
3.0
0.9
1.3
1.7
2.1
2.5
P1-P3P4-P4

NST847BF3T5G

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Buy NST847BF3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SNGL NPN GP TRANS
Lifecycle:
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