RSS040P03FU6TB

RSS040P03
Transistors
Rev.A 1/4
Switching (30V, 4.0A)
RSS040P03
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon P-channel
MOS FET
zExternal dimensions (Unit : mm)
Each lead has same dimensions
SOP8
3.9
6.0
0.4Min.
5.0
1.27
0.2
1.75
(
1
)
(
4
)
(
8
)
(
5
)
0.4
zPackaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
RSS040P03
TB
2500
Type
zAbsolute maximum ratings (Ta=25°C)
1
1
2
Parameter
V
V
DSS
Symbol
30
V
V
GSS
±20
A
I
D
±4.0
A
I
DP
±16
A
I
S
1.6
A
I
SP
16
W
P
D
2.0
°C
Tch 150
°C
Tstg
55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Source current
(Body diode)
zEquivalent circuit
(1) N / C
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(8) (7) (6) (5)
(1) (2) (3) (4)
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter
Symbol Limits Unit
Channel to ambient
Mounted on a ceramic board.
RSS040P03
Transistors
Rev.A 2/4
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Body diode characteristics (source-drain characteristics)
V
SD
−−1.2 VForward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Min.
−−±10 µAV
GS
20V, V
DS
=0V
V
DD
15V
Typ. Max.
Unit
Conditions
30 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 30V, V
GS
=0V
1.0 −−2.5 V V
DS
= 10V, I
D
= 1mA
42 58 I
D
= 4.0A, V
GS
= 10V
68 92 m
m
m
I
D
= 2.0A, V
GS
= 4.5V
78 106 I
D
= 2.0A, V
GS
= 4.0V
2.5 −−SV
DS
= 10V, I
D
= 2.0A
800 pF V
DS
= 10V
180
110
pF V
GS
=0V
12
pF f=1MHz
25
ns
45
ns
15
ns
8.0
ns
2.5
nC
3.0
nC V
GS
=
5V
−−nC I
D
=
4.0A
I
S
= 1.6A, V
GS
=0V
V
DD
15V
I
D
= 2.0A
V
GS
= 10V
R
L
=7.5
R
GS
=10
Pulsed
RSS040P03
Transistors
Rev.A 3/4
zElectrical characteristic curves
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
Fig.1
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
= −10V
Pulsed
0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=25°C
Pulsed
V
GS
= −4V
V
GS
= −4.5V
V
GS
= −10V
V
GS
= −10V
Pulsed
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
0.1 1 10
10
100
1000
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.4 Static Drain-Source On-State
vs. Drain Current
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=
4.5V
Pulsed
0.1 1 10
10
100
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=
4V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT : I
DR
(A)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=0V
Pulsed
Fig.6 Reverse Drain Current
Source-Drain Current
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
10000
10
100
1000
Ta=25°C
f=1MHz
V
GS
=0V
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
= −15V
V
GS
= −10V
R
G
=10
Pulsed
Fig.8 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
012345678910
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.9
Dynamic Input Characteristics
Ta=25°C
V
DD
= −15V
I
D
= −4.0A
R
G
=10
Pulsed

RSS040P03FU6TB

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
MOSFET 30V 4A P CHANNEL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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