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MMBT2222ATT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
July, 2018 − Rev. 6
1 Publication Order Number:
MMBT2222ATT1/D
MMBT2222ATT1G,
NSVMMBT2222ATT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction−to−Ambient
R
q
JA
833 °C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1P M G
G
1
MMBT2222ATT1G SOT−416
(Pb−Free)
3000 / Tape &
Reel
1P = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
CASE 463
SOT−416/SC−75
STYLE 1
3
2
1
NSVMMBT2222ATT1G SOT−416
(Pb−Free)
3000 / Tape &
Reel
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
75 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
BL
− 20 nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
CEX
− 10 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
H
FE
35
50
75
100
40
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.3
1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30 pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
ie
0.25 1.25
kW
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
re
− 4.0 X 10
−4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
fe
75 375 −
Output Admittance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
oe
25 200
mmhos
Noise Figure
(V
CE
= 10 Vdc, I
C
= 100 mAdc, R
S
= 1.0 k ohms, f = 1.0 kHz)
NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 10
ns
Rise Time t
r
− 25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 60
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAINV
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
= 125°C
T
J
= 25°C
25°C
-55°C
I
C
= 1.0 mA
10 mA 150 mA
500 mA
V
CE
= 1.0 V
V
CE
= 10 V
P1-P3P4-P6

MMBT2222ATT1G

Mfr. #:
Buy MMBT2222ATT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BJT SS SC75 GP XSTR NPN 40V
Lifecycle:
New from this manufacturer.
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