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BSS209PW L6327

P1-P3P4-P6P7-P9
BSS 209PW
1 Power dissipation 2 Drain current
P
tot
=f(T
A
) I
D
=f(T
A
); |V
GS
|≥4.5 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C
1)
; D =0
Z
thJS
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
0.1 1 10 100
-V
DS
[V]
-I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
1
10
100
1000
t
p
[s]
Z
thJS
[K/W]
0
0.2
0.4
0.6
0.8
1
1.2
0 40 80 120 160
T
A
[°C]
P
tot
[W]
0
0.2
0.4
0.6
0 40 80 120 160
T
A
[°C]
-I
D
[A]
Rev. 1.32 page 4 2011-07-13
BSS 209PW
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
-2 V
-2.3 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
100
200
300
400
500
600
700
800
900
1000
0 0.5 1 1.5 2 2.5 3 3.5
-I
D
[A]
R
DS(on)
[m
Ω
]
25 °C
150 °C
0
1
2
3
0123
-V
GS
[V]
-I
D
[A]
0
1
2
3
01234
-I
D
[A]
g
fs
[S]
-2.3 V
-2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
1
2
3
4
02356
-V
DS
[V]
-I
D
[A]
Rev. 1.32 page 5 2011-07-13
BSS 209PW
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=-0.58 A; V
GS
=-4.5 V
V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=-3.5 μA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ.
98 %
250
300
350
400
450
500
550
600
650
700
750
800
-60 -20 20 60 100 140
T
j
[°C]
R
DS(on)
[m
Ω
]
Ciss
Coss
Crss
10
3
10
2
10
100
1000
0 5 10 15 20
-V
DS
[V]
C [pF]
typ.
min.
max.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-60 -20 20 60 100 140
T
j
[°C]
-V
GS(th)
[V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5
-V
SD
[V]
I
F
[A]
Rev. 1.32 page 6 2011-07-13
P1-P3P4-P6P7-P9

BSS209PW L6327

Mfr. #:
Buy BSS209PW L6327
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -20V 580mA SOT-323-3
Lifecycle:
New from this manufacturer.
Delivery:
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