FDS9431A-F085 Datasheet FDS9431A-F085 | P1-P3

Features

• -3.5 A, -20 V. R

DS(ON)

= 0.130 Ω @ V

GS

= -4.5 V

R

DS(ON)

= 0.180 Ω @ V

GS

= -2.5 V.

• Fast switching speed.

• High density cell design for extremely low R

DS(ON)

.

• High power and current handling capability.

Absolute Maximum Ratings

T

A

=25

o

C unless

otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage -20 V

V

GSS

Gate-Source Voltage

±

8

V

I

D

Drain Current - Continuous

(Note 1a)

-3.5 A

- Pulsed -18

Power Dissipation for Single Operation

(N

ote 1a)

2.5

(N

ote 1b)

1.2

P

D

(N

ote 1c)

1.0

W

T

J

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

°

C

Therm

al Characteristics

R

q

JA

Thermal Resistance, Junction-to-Ambient

(N

ote 1a)

50

°

C/W

R

q

JC

Thermal Resistance, Junction-to-Case

(N

ote 1)

25

°

C/W

Package Mark

ing and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9431A

FDS9431A-F085

13’’ 12mm 2500 units

FDS9431A-F085

P-Channel 2.5V Specified MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced

using ON Semiconductor's proprietary, high cell

density, DMOS technology. This very high density

process has been especially tailored to minimize on-

state resistance and yet maintain superior switching

performance.

Applications

• DC/DC converter

• Power management

• Load switch

• Battery protection

S

D

S

SO-

8

D

G

5

6

8

3

1

7

4

2

September-2017,Rev.1

Publication Order Number:

FDS9431A-F085/D

• Qualified to AEC Q101

• RoHS Compliant

FDS9431A

-F085 P-Channel 2.5V Specified MOSFET

Electrical Characteristics T

A

= 25°C unless otherwise noted

S

ymbol Parameter Test Conditions Min Typ Max Units

O

ff Characteristics

BV

DS

S

Drai

n-Source Breakdown Voltage

V

GS

= 0 V

, I

D

= -250

m

A

-20

V

D

BV

DSS

D

T

J

Breakdown Voltage Temperature

Coefficient

I

D

= -250

m

A,R

eferenced to 25

°

C

-28

mV/

°

C

I

DS

S

Zero Gat

e Voltage Drain Current V

DS

=

-16 V, V

GS

= 0 V

-1

m

A

I

GSSF

Gat

e-Body Leakage Current,

Forward

V

GS

= 8 V

, V

DS

= 0 V

100 nA

I

GSSR

Gat

e-Body Leakage Current,

Reverse

V

GS

=

-8 V, V

DS

= 0 V

-100 nA

On Characteristics

(Note 2)

V

GS(

th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250

m

A

-0.

4 -0.6 -1 V

D

V

GS

(th)

D

T

J

Gat

e Threshold Voltage

Temperature Coefficient

I

D

= -250

m

A,R

eferenced to 25

°

C

2

mV/

°

C

R

D

S(on)

S

tatic Drain-Source

On-Resistance

V

GS

=

-4.5 V, I

D

=

-3.5 A

V

GS

=

-2.5 V, I

D

=

-3.0 A

V

GS

=

-4.5 V, I

D

=

-3.5 A

T

J

=125

°

C

0.

110

0.140

0.155

0.130

0.180

0.220

W

I

D

(on)

On-State Drain Current V

GS

= -4.5 V, V

DS

=-5 V -10 A

g

FS

Forw

ard Transconductance V

DS

=

-5 V, I

D

=

-3.5 A 6.5 S

Dynamic Characteristics

C

iss

I

nput Capacitance 405 pF

C

os

s

Out

put Capacitance 170 pF

C

rs

s

Revers

e Transfer Capacitance

V

DS

= -10 V

, V

GS

= 0 V

,

f = 1.0 MHz

45 pF

Sw

itching Characteristics

(Note 2)

t

d(

on)

T

urn-On Delay Time 6.5 13 ns

t

r

Turn-On Ri

se Time 20 35 ns

t

d(off)

Turn-Of

f Delay Time 31 50 ns

t

f

Turn-Off Fall Time

V

DD

=

-5 V, I

D

= -1 A

,

V

GS

=

-4.5 V, R

GEN

= 6

W

21

35 ns

Q

g

To

tal Gate Charge 6 8.5 nC

Q

gs

Gat

e-Source Charge 0.8 nC

Q

gd

Gat

e-Drain Charge

V

DS

=

-5 V, I

D

=

-3.5 A,

V

GS

=

-4.5 V

1.3 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

M

aximum Continuous Drain-Source Diode Forward Current -2.1 A

V

SD

Drain-Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= -2.1 A

(Note 2)

-0.7 -1.2 V

Notes:

1: R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

a) 50° C/W when

mounted on a 1 in

2

pad of 2 oz. copper.

b) 105° C/W when

mounted on a 0.04 in

2

pad of 2 oz. copper.

c) 125° C/W on a minimum

mounting

pad.

www.onsemi.com

2

FDS9431A

-F085 P-Channel 2.5V Specified MOSFET

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Typical Characteristics

0

2

4

6

8

10

01

2345

-V

DS

, DRA

IN TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5V

-3.5V

-2

.5V

-2

.0V

-1

.5V

0

246810

0.8

1

1.2

1.4

1.6

1.8

2

-I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -2.0V

GS

D

R , NORMALIZED

DS(ON)

-3.0

-3.5

-4.5

-4.0

-2.5

123

45

0

0.1

0.2

0.3

0.4

0.5

-V ,GATE TO SOURCE VOLTAGE (V)

R ,ON-RESISTANCE(OHM)

GS

25°C

T = 125°C

J

I = -0.8A

D

DS(ON)

0

0.2 0.4 0.6 0.8 1 1.2 1.4

0.0001

0.001

0.01

0.1

1

10

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

25°C

-55°C

V = 0V

GS

SD

S

T = 125°C

J

R , NORMALIZED

DS(ON)

-50

-25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = -4.5V

GS

I = -1.6A

D

01234

0

2

4

6

8

10

-V , GATE TO SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

A

125°C

25°C

FDS9431A

-F085 P-Channel 2.5V Specified MOSFET

www.onsemi.com

3

FDS9431A-F085

FDS9431A-F085

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