OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPI80N06S3L-08

P1-P3P4-P6P7-P9
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
80 A
T
C
=100 °C,
V
GS
=10 V
2)
61
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
2)
E
AS
I
D
=40 A
240 mJ
Avalanche current, single pulse
I
AS
80 A
Gate source voltage
3)
V
GS
±16 V
Power dissipation
P
tot
T
C
=25 °C
105 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
55 V
R
DS(on),max
(SMD version) 7.6
mΩ
I
D
80 A
Product Summary
Type Package Marking
IPB80N06S3L-08 PG-TO263-3-2 3N06L08
IPI80N06S3L-08 PG-TO262-3-1 3N06L08
IPP80N06S3L-08 PG-TO220-3-1 3N06L08
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.1 page 1 2007-11-07
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 1.4 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
4)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
55 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=55 µA
1.2 1.7 2.2
Zero gate voltage drain current
I
DSS
V
DS
=55 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=55 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=16 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=5 V, I
D
=29 A
- 11.5 14.2
mΩ
V
GS
=5 V, I
D
=29 A,
SMD version
- 11.2 13.9
V
GS
=10 V, I
D
=43 A
- 6.5 7.9
V
GS
=10 V, I
D
=43 A,
SMD version
- 6.2 7.6
Values
Rev. 1.1 page 2 2007-11-07
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 6475 - pF
Output capacitance
C
oss
- 812 -
Reverse transfer capacitance
C
rss
- 775 -
Turn-on delay time
t
d(on)
-16-ns
Rise time
t
r
-35-
Turn-off delay time
t
d(off)
-39-
Fall time
t
f
-25-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-34-nC
Gate to drain charge
Q
gd
-16-
Gate charge total
Q
g
- 89 134
Gate plateau voltage
V
plateau
- 4.9 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 80 A
Diode pulse current
2)
I
S,pulse
- - 320
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=80 A,
T
j
=25 °C
0.6 0.9 1.3 V
Reverse recovery time
2)
t
rr
-40-ns
Reverse recovery charge
2)
Q
rr
-50-nC
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=27.5 V,
V
GS
=10 V, I
D
=80 A,
R
G
=3.5 Ω
V
DD
=11 V, I
D
=80 A,
V
GS
=0 to 10 V
V
R
=27.5 V, I
F
=I
S
,
di
F
/dt =100 A/µs
1)
Current is limited by bondwire; with an R
thJC
= 1.4 K/W the chip is able to carry 86 A at 25°C. For detailed
information see Application Note ANPS071E
2)
Defined by design. Not subject to production test.
3)
Qualified at -5V and +16V
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1 page 3 2007-11-07
P1-P3P4-P6P7-P9

IPI80N06S3L-08

Mfr. #:
Buy IPI80N06S3L-08
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 55V 80A I2PAK-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet